component
AGM412S
Public Made by Adomby adom
AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAGM412S
AGM-Semi · MOSFETs · SOP-8
AGM412S from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pin 1, marked by the dot); tie together with pins 2 and 3. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; tie together with pins 1 and 3. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; tie together with pins 1 and 2. |
| 4 | G | input | Gate terminal; VGS rated ±20 V maximum, threshold 1.2 V min to 2.2 V max at ID=250μA. |
| 5 | D | passive | Drain terminal; VDS rated 40 V maximum, continuous ID 13 A at TA=25℃; tie together with pins 6-8. |
| 6 | D | passive | Drain terminal; VDS rated 40 V maximum; tie together with pins 5, 7 and 8. |
| 7 | D | passive | Drain terminal; VDS rated 40 V maximum; tie together with pins 5, 6 and 8. |
| 8 | D | passive | Drain terminal; VDS rated 40 V maximum; tie together with pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | 13 | A | TA=25℃ | 1 | ||
| Drain Current-Continuous | ID | 8.5 | A | TA=100℃ | 1 | ||
| Drain Current-Pulsed | IDM | 52 | A | 1 | |||
| Maximum Power Dissipation | PD | 2.5 | w | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1 | w | TA=100℃ | 1 | ||
| Avalanche energy | EAS | 90 | mJ | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | Steady State | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.4 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Forward Transconductance | gFS | 10 | S | VDS=5V,ID=5A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 11 | 14 | mΩ | VGS=10V, ID=8A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 13.5 | 22 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Input Capacitance | Ciss | 1125 | pF | VGS=0V, VDS=20V,F=1MHZ | 2 | ||
| Output Capacitance | Coss | 103 | pF | VGS=0V, VDS=20V,F=1MHZ | 2 | ||
| Reverse Transfer Capacitance | Crss | 77 | pF | VGS=0V, VDS=20V,F=1MHZ | 2 | ||
| Turn-on Delay Time | td(on) | 9 | nS | VGS=10V,VDS=20V, ID=8A,RL=1Ω,RGEN=3Ω | 2 | ||
| Turn-on Rise Time | tr | 8 | nS | VGS=10V,VDS=20V, ID=8A,RL=1Ω,RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 29 | nS | VGS=10V,VDS=20V, ID=8A,RL=1Ω,RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 14 | nS | VGS=10V,VDS=20V, ID=8A,RL=1Ω,RGEN=3Ω | 2 | ||
| Total Gate Charge | Qg | 18 | nC | VGS=10V, VDS=20V, ID=8A | 2 | ||
| Gate-Source Charge | Qgs | 3.2 | nC | VGS=10V, VDS=20V, ID=8A | 2 | ||
| Gate-Drain Charge | Qgd | 3.8 | nC | VGS=10V, VDS=20V, ID=8A | 2 | ||
| Source-Drain Current (Body Diode) | ISD | 13 | A | 2 | |||
| Forward on Voltage | VSD | 1.2 | V | VGS=0V,IS=8A | 2 | ||
| Reverse Recovery Time | trr | 20 | ns | IF=8A , dI/dt=100A/µs , TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 10 | nc | IF=8A , dI/dt=100A/µs , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
AGM412S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
agm412s-etched.step/agm412s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm412s.step/agm412s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (9 pp, sha256
07c88647dad2a1d6, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).