component
AGM40P65E
Public Made by Adomby adom
AGM Semi MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAGM40P65E
AGM Semi · MOSFETs · SOT-23-3
AGM40P65E from AGM Semi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V and threshold VGS(th) is -1.1 V min to -2.3 V max at ID=-250μA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous body-diode current ISD is -5.0 A max. |
| 3 | D | passive | Drain; drain-source voltage rating is -40 V, with continuous drain current of -3.3 A at TA=25℃ and pulsed -13 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.1 | -1.6 | -2.3 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 70 | 85 | mΩ | VGS=-10V, ID=-3A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 95 | 120 | mΩ | VGS=-4.5V, ID=-2A | 2 | |
| Source-Drain Current (Body Diode) | ISD | -5 | A | 2 | |||
| Forward on Voltage | VSD | -1.2 | V | VGS=0V,IS=-3A | 2 | ||
| Drain-Source Voltage | VDS | -40 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | -3.3 | A | TA=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous | ID | -2 | A | TA=70℃ | 1 | ||
| Drain Current-Continuous Pulsed | IDM | -13 | A | Current-Pulsed (Note 2) | 1 | ||
| Maximum Power Dissipation | PD | 1.4 | w | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 89 | ℃/W | Steady State (Note 1) | 1 |
CAD (KiCad official)
- Symbol:
AGM40P65E - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
agm40p65e-etched.step/agm40p65e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm40p65e.step/agm40p65e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM Semi datasheet (7 pp, sha256
fa295e218907e34a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).