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AGM40P35D

AGM-Semi · MOSFETs · TO-252

AGM40P35D from AGM-Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold VGS(th) -1.2 V min to -2.2 V max at ID=-250μA.
2 D passive Drain (also connected to the exposed tab); VDS max -40 V, continuous drain current -60 A (package limited) at Tc=25℃.
3 S passive Source; body diode continuous source current up to -60 A with forward voltage max -1.2 V at IS=-15A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -40 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-40V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1.2 -1.7 -2.2 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(on) 11 15 mΩ VGS=-10V, ID=-15A 2
Drain-Source On-State Resistance RDS(on) 17.5 24 mΩ VGS=-4.5V, ID=-10A 2
Source-Drain Current (Body Diode) ISD -60 A 2
Forward on Voltage VSD -1.2 V VGS=0V,IS=-15A 2
Drain-Source Voltage VDS -40 V VGS=0V, TA=25℃ 1
Gate-Source Voltage VGS -20 20 V VDS=0V, TA=25℃ 1
Continuous Drain Current ID -60 A Tc=25℃ 1
Continuous Drain Current ID -36 A Tc=100℃ 1
Maximum Power Dissipation PD 30 w Tc=25℃ 1
Maximum Power Dissipation PD 12 w Tc=100℃ 1
Avalanche energy EAS 256 mJ TJ=25℃,VDD=-25V,Vgs=-10V,ID=-32A,L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 4.17 ℃/W 1
Forward Transconductance gFS 12 S VDS=-5V,ID=-10A 2
Input Capacitance Ciss 2660 pF VDS=-20V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 360 pF VDS=-20V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 248 pF VDS=-20V,VGS=0V, F=1MHZ 2
Turn-on Delay Time td(on) 10 nS VGS=-10V,VDS=-20V, ID=-12A,RGEN=3Ω 2
Turn-on Rise Time tr 18 nS VGS=-10V,VDS=-20V, ID=-12A,RGEN=3Ω 2
Turn-Off Delay Time td(off) 38 nS VGS=-10V,VDS=-20V, ID=-12A,RGEN=3Ω 2
Turn-Off Fall Time tf 24 nS VGS=-10V,VDS=-20V, ID=-12A,RGEN=3Ω 2
Total Gate Charge Qg 72 nC VGS=-10V, VDS=-20V, ID=-12A 2
Gate-Source Charge Qgs 14 nC VGS=-10V, VDS=-20V, ID=-12A 2
Gate-Drain Charge Qgd 15 nC VGS=-10V, VDS=-20V, ID=-12A 2
Reverse Recovery Time trr 40 ns Isd=-15A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 42 nc Isd=-15A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM40P35D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: agm40p35d-etched.step / agm40p35d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm40p35d.step / agm40p35d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 f7813f95496c3397, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF