component
AGM40P26E
Public Made by Adomby adom
AGM-Semi MOSFETs, SOT23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAGM40P26E
AGM-Semi · MOSFETs · SOT23-3
AGM40P26E from AGM-Semi, in a SOT23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V (VDS=0V) with a threshold of -1.2 V min to -2.2 V max at ID=-250µA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous body-diode current is rated at -5.8 A. |
| 3 | D | passive | Drain; drain-source voltage is rated at -40 V, continuous drain current -5.8 A at TA=25℃ and pulsed drain current 23.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOT23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous (TA=25℃) | ID | -5.8 | A | TA=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous (TA=70℃) | ID | -3.5 | A | TA=70℃ | 1 | ||
| Drain Current-Pulsed | IDM (pluse) | -23.5 | A | Note 2: pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation (TA=25℃) | PD | 1.25 | w | TA=25℃ | 1 | ||
| Avalanche energy | EAS | 56 | mJ | Note 3: TJ=25℃,VDD=-20V,Vgs=-10V,ID=-15A,L=0.5mH,RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 100 | ℃/W | Steady State | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.6 | -2.2 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance (VGS=-10V) | RDS(on) | 36 | 38 | mΩ | VGS=-10V, ID=-6A | 2 | |
| Drain-Source On-State Resistance (VGS=-4.5V) | RDS(on) | 45 | 50 | mΩ | VGS=-4.5V, ID=-4A | 2 | |
| Source-Drain Current (Body Diode) | ISD | -5.8 | A | 2 | |||
| Forward on Voltage | VSD | -1.2 | V | VGS=0V,IS=-5A | 2 |
CAD (KiCad official)
- Symbol:
AGM40P26E - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT23-3 (KiCad packages3D, STEP)
- 3D model files:
agm40p26e-etched.step/agm40p26e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm40p26e.step/agm40p26e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (8 pp, sha256
d0f66e0b5a544521, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).