component
AGM40P100H
Public Made by Adomby adom
AGM-Semi MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AGM40P100H
AGM-Semi · MOSFETs · TO-263
AGM40P100H from AGM-Semi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; left pin in the top view, gate-source voltage rated ±20 V with threshold of -1.2 V min to -2.2 V max at ID=-250μA. |
| 2 | D | passive | Drain; centre lead, connected to the exposed drain tab, with drain-source voltage rated -40 V and continuous drain current of -140 A (package limited) at Tc=25℃. |
| 3 | S | passive | Source; right pin in the top view, with body-diode source-drain current up to -140 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.6 | -2.2 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 4.6 | 6.5 | mΩ | VGS=-10V, ID=-20A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 6 | 8.6 | mΩ | VGS=-4.5V, ID=-15A | 2 | |
| Source-Drain Current (Body Diode) | ISD | -140 | A | 2 | |||
| Forward on Voltage | VSD | -1.2 | V | VGS=0V,IS=-20A | 2 | ||
| Forward Transconductance | gFS | 15 | S | VDS=-5V,ID=-5A | 2 | ||
| Input Capacitance | Ciss | 6550 | pF | VDS=-20V,VGS=0V, F=1MHZ | 2 | ||
| Output Capacitance | Coss | 515 | pF | VDS=-20V,VGS=0V, F=1MHZ | 2 | ||
| Reverse Transfer Capacitance | Crss | 520 | pF | VDS=-20V,VGS=0V, F=1MHZ | 2 | ||
| Gate resistance | Rg | 2.5 | Ω | VGS=0V, VDS=0V,f=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 41 | nS | VGS=-10V,VDS=-20V, ID=-12A,RGEN=3Ω | 2 | ||
| Turn-on Rise Time | tr | 12 | nS | VGS=-10V,VDS=-20V, ID=-12A,RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 308 | nS | VGS=-10V,VDS=-20V, ID=-12A,RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 70 | nS | VGS=-10V,VDS=-20V, ID=-12A,RGEN=3Ω | 2 | ||
| Total Gate Charge | Qg | 106 | nC | VGS=-10V, VDS=-20V, ID=-12A | 2 | ||
| Gate-Source Charge | Qgs | 13 | nC | VGS=-10V, VDS=-20V, ID=-12A | 2 | ||
| Gate-Drain Charge | Qgd | 24 | nC | VGS=-10V, VDS=-20V, ID=-12A | 2 | ||
| Reverse Recovery Time | trr | 24 | ns | Isd=-20A , dI/dt=100A/µs , TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 140 | nc | Isd=-20A , dI/dt=100A/µs , TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -40 | V | VGS=0V, TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V, TA=25℃ | 1 | |
| Drain Current-Continuous | ID | -140 | A | Tc=25℃, package limited | 1 | ||
| Drain Current-Continuous | ID | -93 | A | Tc=100℃ | 1 | ||
| Drain Current-Pulsed | IDM | -560 | A | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 200 | w | Tc=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 100 | w | Tc=100℃ | 1 | ||
| Avalanche energy | EAS | 420 | mJ | TJ=25℃,VDD=-20V,Vgs=-10V,ID=-41A,L=0.5mH,RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | TA=25℃ | 1 | |
| Thermal Resistance Junction-ambient | RθJA | 40 | ℃/W | Steady State | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 0.92 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
AGM40P100H - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
agm40p100h-etched.step/agm40p100h-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm40p100h.step/agm40p100h.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (7 pp, sha256
3eadec2a85a119ce, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AGM40P100H
**AGM-Semi** · MOSFETs · TO-263
AGM40P100H from AGM-Semi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; left pin in the top view, gate-source voltage rated ±20 V with threshold of -1.2 V min to -2.2 V max at ID=-250μA. |
| 2 | D | passive | Drain; centre lead, connected to the exposed drain tab, with drain-source voltage rated -40 V and continuous drain current of -140 A (package limited) at Tc=25℃. |
| 3 | S | passive | Source; right pin in the top view, with body-diode source-drain current up to -140 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -40 | | | V | VGS=0V ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-40V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.6 | -2.2 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 4.6 | 6.5 | mΩ | VGS=-10V, ID=-20A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 6 | 8.6 | mΩ | VGS=-4.5V, ID=-15A | 2 |
| Source-Drain Current (Body Diode) | ISD | | | -140 | A | | 2 |
| Forward on Voltage | VSD | | | -1.2 | V | VGS=0V,IS=-20A | 2 |
| Forward Transconductance | gFS | | 15 | | S | VDS=-5V,ID=-5A | 2 |
| Input Capacitance | Ciss | | 6550 | | pF | VDS=-20V,VGS=0V, F=1MHZ | 2 |
| Output Capacitance | Coss | | 515 | | pF | VDS=-20V,VGS=0V, F=1MHZ | 2 |
| Reverse Transfer Capacitance | Crss | | 520 | | pF | VDS=-20V,VGS=0V, F=1MHZ | 2 |
| Gate resistance | Rg | | 2.5 | | Ω | VGS=0V, VDS=0V,f=1.0MHz | 2 |
| Turn-on Delay Time | td(on) | | 41 | | nS | VGS=-10V,VDS=-20V, ID=-12A,RGEN=3Ω | 2 |
| Turn-on Rise Time | tr | | 12 | | nS | VGS=-10V,VDS=-20V, ID=-12A,RGEN=3Ω | 2 |
| Turn-Off Delay Time | td(off) | | 308 | | nS | VGS=-10V,VDS=-20V, ID=-12A,RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf | | 70 | | nS | VGS=-10V,VDS=-20V, ID=-12A,RGEN=3Ω | 2 |
| Total Gate Charge | Qg | | 106 | | nC | VGS=-10V, VDS=-20V, ID=-12A | 2 |
| Gate-Source Charge | Qgs | | 13 | | nC | VGS=-10V, VDS=-20V, ID=-12A | 2 |
| Gate-Drain Charge | Qgd | | 24 | | nC | VGS=-10V, VDS=-20V, ID=-12A | 2 |
| Reverse Recovery Time | trr | | 24 | | ns | Isd=-20A , dI/dt=100A/µs , TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr | | 140 | | nc | Isd=-20A , dI/dt=100A/µs , TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | -40 | V | VGS=0V, TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | VDS=0V, TA=25℃ | 1 |
| Drain Current-Continuous | ID | | | -140 | A | Tc=25℃, package limited | 1 |
| Drain Current-Continuous | ID | | | -93 | A | Tc=100℃ | 1 |
| Drain Current-Pulsed | IDM | | | -560 | A | TA=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 200 | w | Tc=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 100 | w | Tc=100℃ | 1 |
| Avalanche energy | EAS | | | 420 | mJ | TJ=25℃,VDD=-20V,Vgs=-10V,ID=-41A,L=0.5mH,RG=25ohm | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 175 | ℃ | TA=25℃ | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 40 | ℃/W | Steady State | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 0.92 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `AGM40P100H`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `agm40p100h-etched.step` / `agm40p100h-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm40p100h.step` / `agm40p100h.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [AGM-Semi datasheet](docs/agm40p100h-datasheet.pdf) (7 pp, sha256 `3eadec2a85a119ce`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/agm40p100h-datasheet.pdf)