component

AGM403DG

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsagm403dgfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
agm403dg / README.md
History Download
Ray Publish 0.1.0 a267821 7d ago

AGM403DG

AGM-Semi · MOSFETs · TO-252

AGM403DG from AGM-Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive limit is ±20 V gate-source (VDS=0V), with a typical threshold of 1.6 V at ID=250μA.
2 D passive Drain, rated 40 V drain-source and 101 A continuous (package limited) at Tc=25℃; it is also connected to the exposed tab.
3 S passive Source; body-diode source-drain current is rated up to 101 A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V,VGS=0V 2
Gate-Body Leakage Current IGSS 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.1 1.6 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 3 3.8 mΩ VGS=10V, ID=20A 2
Drain-Source On-State Resistance RDS(on) 3.8 4.8 mΩ VGS=4.5V, ID=15A 2
Source-Drain Current (Body Diode) ISD 101 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=20A 2
Drain-Source Voltage VDS 40 V VGS=0V, Tc=25℃ 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 101 A Tc=25℃ (package limited) 1
Drain Current-Continuous ID 70 A Tc=100℃ 1
Pulsed Drain Current IDM 405 A Pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 28 w Tc=25℃ 1
Maximum Power Dissipation PD 11 w Tc=100℃ 1
Avalanche energy EAS 75 mJ TJ=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 60 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 4.5 ℃/W 1
Forward Transconductance gFS 4 S VDS=5V,ID=10A 2
Input Capacitance Ciss 842 pF VDS=20V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 321 pF VDS=20V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 13 pF VDS=20V,VGS=0V, F=1MHZ 2
Gate resistance Rg 3.7 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Total Gate Charge Qg 13.5 nC VGS=10V, VDS=20V, ID=20A 2
Gate-Source Charge Qgs 2.4 nC VGS=10V, VDS=20V, ID=20A 2
Gate-Drain Charge Qgd 2.6 nC VGS=10V, VDS=20V, ID=20A 2
Turn-on Delay Time td(on) 5.5 nS VGS=10V,VDS=20V, RL=1Ω,RGEN=1.6Ω 2
Turn-on Rise Time tr 49.5 nS VGS=10V,VDS=20V, RL=1Ω,RGEN=1.6Ω 2
Turn-Off Delay Time td(off) 18 nS VGS=10V,VDS=20V, RL=1Ω,RGEN=1.6Ω 2
Turn-Off Fall Time tf 5.5 nS VGS=10V,VDS=20V, RL=1Ω,RGEN=1.6Ω 2
Reverse Recovery Time trr 28.6 ns ID=20A ,VDD=20V dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 15 nc ID=20A ,VDD=20V dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM403DG
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: agm403dg-etched.step / agm403dg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm403dg.step / agm403dg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 d0c3f1d87355a457, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF