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AGM402H

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM402H

AGM-Semi · MOSFETs · TO-263

AGM402H from AGM-Semi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) 1.2 V min to 2.2 V max at ID=250µA.
2 D passive Drain, also connected to the exposed thermal tab; VDS max 40 V and continuous ID 170 A at Tc=25°C (package limited).
3 S passive Source; body diode continuous current ISD up to 170 A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 40 45 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.7 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 2.6 3.9 mΩ VGS=10V, ID=30A 2
Drain-Source On-State Resistance RDS(on) 3.3 5 mΩ VGS=4.5V, ID=20A 2
Source-Drain Current (Body Diode) ISD 170 A 2
Forward on Voltage VSD 0.8 1.2 V VGS=0V,IS=30A 2
Drain-Source Voltage VDS 40 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Continuous Drain Current ID 170 A Tc=25℃ 1
Continuous Drain Current ID 98 A Tc=100℃ 1
Maximum Power Dissipation PD 250 w Tc=25℃ 1
Maximum Power Dissipation PD 100 w Tc=100℃ 1
Avalanche Energy EAS 552 mJ TJ=25℃,VDD=25V,Vgs=10V,ID=47A,L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 0.5 ℃/W 1
Forward Transconductance gFS 28 S VDS=5V,ID=10A 2
Input Capacitance Ciss 4140 pF VDS=20V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 405 pF VDS=20V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 360 pF VDS=20V,VGS=0V, F=1MHZ 2
Gate resistance Rg 2 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 13.7 nS VGS=10V,VDS=20V,ID=40A,RGEN=3Ω 2
Turn-on Rise Time tr 6.1 nS VGS=10V,VDS=20V,ID=40A,RGEN=3Ω 2
Turn-Off Delay Time td(off) 50 nS VGS=10V,VDS=20V,ID=40A,RGEN=3Ω 2
Turn-Off Fall Time tf 10 nS VGS=10V,VDS=20V,ID=40A,RGEN=3Ω 2
Total Gate Charge Qg 73 nC VGS=20V, VDS=20V, ID=40A 2
Gate-Source Charge Qgs 15 nC VGS=20V, VDS=20V, ID=40A 2
Gate-Drain Charge Qgd 15 nC VGS=20V, VDS=20V, ID=40A 2
Reverse Recovery Time trr 18 ns IS=30A , dI/dt=500A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 40 nc IS=30A , dI/dt=500A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM402H
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: agm402h-etched.step / agm402h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm402h.step / agm402h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (6 pp, sha256 2877be21ba8be733, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF