component

AGM402C1

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsagm402c1factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
agm402c1 / README.md
History Download
Ray Publish 0.1.0 d6e0d18 7d ago

AGM402C1

AGM-Semi · MOSFETs · TO-220

AGM402C1 from AGM-Semi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate control input; gate-source voltage is rated at ±20 V maximum, with threshold of 1.2 V min to 2.2 V max at 250 µA.
2 D passive Drain terminal, also connected to the mounting tab; drain-source voltage is rated at 40 V and continuous current is 170 A at Tc=25℃ (package limited).
3 S passive Source terminal; body diode source-drain current is rated at 170 A maximum.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 40 45 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.7 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 2.3 3.2 mΩ VGS=10V, ID=30A 2
Drain-Source On-State Resistance RDS(on) 3.1 5 mΩ VGS=4.5V, ID=20A 2
Source-Drain Current (Body Diode) ISD 170 A 2
Forward on Voltage VSD 0.8 1.2 V VGS=0V,IS=30A 2
Drain-Source Voltage VDS 40 V VGS=0V, TA=25℃ 1
Gate-Source Voltage VGS -20 20 V VDS=0V, TA=25℃ 1
Drain Current-Continuous ID 170 A Tc=25℃ (package limited) 1
Drain Current-Continuous ID 98 A Tc=100℃ 1
Maximum Power Dissipation PD 250 W Tc=25℃ 1
Maximum Power Dissipation PD 100 W Tc=100℃ 1
Avalanche energy EAS 1000 mJ TJ=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 0.5 ℃/W 1
Forward Transconductance gFS 28 S VDS=5V,ID=10A 2
Input Capacitance Ciss 4140 pF VDS=20V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 405 pF VDS=20V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 360 pF VDS=20V,VGS=0V, F=1MHZ 2
Gate resistance Rg 2 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 13.7 nS VGS=10V,VDS=20V,ID=40A,RGEN=3Ω 2
Turn-on Rise Time tr 6.1 nS VGS=10V,VDS=20V,ID=40A,RGEN=3Ω 2
Turn-Off Delay Time td(off) 50 nS VGS=10V,VDS=20V,ID=40A,RGEN=3Ω 2
Turn-Off Fall Time tf 10 nS VGS=10V,VDS=20V,ID=40A,RGEN=3Ω 2
Total Gate Charge Qg 73 nC VGS=10V, VDS=20V, ID=40A 2
Gate-Source Charge Qgs 15 nC VGS=10V, VDS=20V, ID=40A 2
Gate-Drain Charge Qgd 15 nC VGS=10V, VDS=20V, ID=40A 2
Reverse Recovery Time trr 18 ns IS=30A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 40 nc IS=30A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM402C1
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: agm402c1-etched.step / agm402c1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm402c1.step / agm402c1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (7 pp, sha256 9ec92ddb5a966a01, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF