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AGM4018S

Public Made by Adom

by adom

AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM4018S

AGM-Semi · MOSFETs · SOP-8

AGM4018S from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, pin 1 of the SOP8 package.
2 S passive Source terminal of the N-channel MOSFET, tied to the other source pins.
3 S passive Source terminal of the N-channel MOSFET, tied to the other source pins.
4 G input Gate terminal with a VGS rating of ±20 V and a typical threshold of 1.5 V (1.2 V to 2.2 V).
5 D passive Drain terminal, with a VDS rating of 48 V and a continuous current of 18 A.
6 D passive Drain terminal, tied to the other drain pins.
7 D passive Drain terminal, tied to the other drain pins.
8 D passive Drain terminal, tied to the other drain pins.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 48 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 18 A TA=25℃ 1
Drain Current-Continuous ID 7 A TA=100℃ 1
Maximum Power Dissipation PD 2.5 w TA=25℃ 1
Maximum Power Dissipation PD 1 w TA=100℃ 1
Avalanche energy EAS 210 mJ TJ=25℃,VDD=25V,Vgs=10V,ID=29A,L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Drain-Source Breakdown Voltage BVDSS 48 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.5 2.2 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(on) 5.8 8.5 mΩ VGS=10V, ID=15A 2
Drain-Source On-State Resistance RDS(on) 8.5 11 mΩ VGS=4.5V, ID=10A 2
Source-Drain Current(Body Diode) ISD 18 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=15A 2
Forward Transconductance gFS 29 S VDS=5V,ID=10A 2
Input Capacitance Ciss 2332 pF VDS=20V,VGS=0V,F=1MHZ 2
Output Capacitance Coss 193 pF VDS=20V,VGS=0V,F=1MHZ 2
Reverse Transfer Capacitance Crss 138 pF VDS=20V,VGS=0V,F=1MHZ 2
Gate resistance Rg 1.6 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 14.3 nS VGS=10V,VDS=15V,ID=1A,RGEN=3.3Ω 2
Turn-on Rise Time tr 2.6 nS VGS=10V,VDS=15V,ID=1A,RGEN=3.3Ω 2
Turn-Off Delay Time td(off) 77 nS VGS=10V,VDS=15V,ID=1A,RGEN=3.3Ω 2
Turn-Off Fall Time tf 4.8 nS VGS=10V,VDS=15V,ID=1A,RGEN=3.3Ω 2
Total Gate Charge Qg 18.8 nC VGS=4.5V, VDS=20V, ID=12A 2
Gate-Source Charge Qgs 4.7 nC VGS=4.5V, VDS=20V, ID=12A 2
Gate-Drain Charge Qgd 8.2 nC VGS=4.5V, VDS=20V, ID=12A 2

CAD (KiCad official)

  • Symbol: AGM4018S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm4018s-etched.step / agm4018s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm4018s.step / agm4018s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (7 pp, sha256 70700d84e95805ae, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF