# AGM3415E

**AGM Semi** · MOSFETs · SOT-23-3

AGM3415E from AGM Semi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; P-channel MOSFET gate, VGS rated ±10 V max, threshold -0.4 to -1.0 V at ID=-250µA. |
| 2 | S | passive | Source; P-channel MOSFET source terminal, continuous drain current -5.0 A at Ta=25℃ (package limited). |
| 3 | D | passive | Drain; drain-source voltage rated -20 V max, pulsed drain current -18 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 |  |  | V | VGS=0V, ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-20V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -8 |  | 8 | μA | VGS=±10V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.7 | -1 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 28 | 35 | mΩ | VGS=-4.5V, ID=-4.0A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 38 | 53 | mΩ | VGS=-2.5V, ID=-3.0A | 2 |
| Source-Drain Current (Body Diode) | ISD |  |  | -5 | V | VGS=0V, IS=-4A | 2 |
| Forward on Voltage | VSD |  |  | -1.2 | V | IF=-4A, dI/dt=100A/µs, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS |  |  | -20 | V | VGS=0V | 1 |
| Gate-Source Voltage | VGS | -10 |  | 10 | V | VDS=0V | 1 |
| Drain Current-Continuous | ID |  |  | -5 | A | Ta=25℃ (Note 1) | 1 |
| Drain Current-Continuous | ID |  |  | -3 | A | Ta=70℃ | 1 |
| Drain Current-Continuous, Current-Pulsed | IDM (pluse) |  |  | -18 | A | Note 2 | 1 |
| Maximum Power Dissipation | PD |  |  | 1.25 | w | Ta=25℃ | 1 |
| Avalanche energy | EAS |  |  | 42 | mJ | Note 3 (TJ=25℃, VDD=-15V, VGS=-10V, ID=-13A, L=0.5mH, RG=25ohm) | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient (Steady State) | RθJA |  |  | 100 | ℃/W | Steady State (Note 1) | 1 |

## CAD (KiCad official)

- Symbol: `AGM3415E`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `agm3415e-etched.step` / `agm3415e-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm3415e.step` / `agm3415e.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [AGM Semi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603180973354213376) (7 pp, sha256 `8760bb4ed841bfab`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/agm3415e-datasheet.pdf)