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AGM3400EL

Public Made by Adom

by adom

AGM-Semi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM3400EL

AGM-Semi · MOSFETs · SOT-23

AGM3400EL from AGM-Semi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±12 V, with threshold VGS(th) 0.65 V min to 1.5 V max at 250 µA.
2 S passive Source; body diode continuous source-drain current is 5.8 A max.
3 D passive Drain; drain-source voltage is 30 V max, with continuous drain current of 5.6 A at TA=25℃ and 23 A pulsed.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V VGS=0V 1
Gate-Source Voltage VGS -12 12 V VDS=0V 1
Drain Current-Continuous ID 5.6 A TA=25℃ 1
Drain Current-Continuous ID 4.5 A TA=70℃ 1
Drain Current-Pulsed IDM 3 A 1
Maximum Power Dissipation PD 1.2 W TA=25℃ 1
Maximum Power Dissipation PD 0.8 W TA=70℃ 1
Avalanche energy EAS 18 mJ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 104 ℃/W Steady State 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.65 0.9 1.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 20 25 mΩ VGS=10V, ID=4A 2
Drain-Source On-State Resistance RDS(on) 22 31 mΩ VGS=4.5V, ID=3A 2
Drain-Source On-State Resistance RDS(on) 27 45 mΩ VGS=2.5V, ID=2A 2
Source-Drain Current (Body Diode) ISD 5.8 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=4A 2
Forward Transconductance gFS 2 S VDS=5V,ID=3A 2
Input Capacitance Ciss 780 pF VDS=15V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 229 pF VDS=15V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 167 pF VDS=15V,VGS=0V, F=1MHZ 2
Gate resistance Rg 8.1 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 4.4 nS VGS=10V,VDS=15V, RGEN=3Ω,ID=5.6A 2
Turn-on Rise Time tr 28 nS VGS=10V,VDS=15V, RGEN=3Ω,ID=5.6A 2
Turn-Off Delay Time td(off) 16 nS VGS=10V,VDS=15V, RGEN=3Ω,ID=5.6A 2
Turn-Off Fall Time tf 26 nS VGS=10V,VDS=15V, RGEN=3Ω,ID=5.6A 2
Total Gate Charge Qg 17 nC VGS=10V, VDS=15V, ID=5.6A 2
Gate-Source Charge Qgs 2.1 nC VGS=10V, VDS=15V, ID=5.6A 2
Gate-Drain Charge Qgd 2 nC VGS=10V, VDS=15V, ID=5.6A 2
Reverse Recovery Time trr 1.1 ns IF=4A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 13.1 nc IF=4A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM3400EL
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: agm3400el-etched.step / agm3400el-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm3400el.step / agm3400el.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 db197832826cbf07, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF