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AGM315MN

Public Made by Adom

by adom

AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM315MN

AGM-Semi · MOSFETs · SOP-8

AGM315MN from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (dual N-channel device, 30V BVDSS, 12A continuous drain current).
2 G1 input Gate of MOSFET 1, with VGS rated at ±20V maximum.
3 S2 passive Source of MOSFET 2 (30V VDS rating).
4 G2 input Gate of MOSFET 2, with VGS rated at ±20V maximum.
5 D2 passive Drain of MOSFET 2, tied internally with pin 6, with VDS rated at 30V maximum.
6 D2 passive Drain of MOSFET 2, tied internally with pin 5, with VDS rated at 30V maximum.
7 D1 passive Drain of MOSFET 1, tied internally with pin 8, with VDS rated at 30V maximum.
8 D1 passive Drain of MOSFET 1, tied internally with pin 7, with VDS rated at 30V maximum.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 12 A Ta=25℃ 1
Drain Current-Continuous ID 10 A Ta=100℃ 1
Drain Current-Pulsed IDM 50 A 1
Maximum Power Dissipation PD 2.5 W Ta=25℃ 1
Maximum Power Dissipation PD 1 W Ta=100℃ 1
Avalanche energy EAS 64 mJ TJ=25℃,VDD=15V,Vgs=10V,ID=16A,L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.5 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 12 16 mΩ VGS=10V, ID=11A 2
Drain-Source On-State Resistance RDS(on) 19 25 mΩ VGS=4.5V, ID=8A 2
Source-Drain Current (Body Diode) ISD 12 A 2
Forward on Voltage VSD 1.2 V VGS=0V,Is=11A 2
Forward Transconductance gFS 13 S VDS=5V,ID=8 2
Input Capacitance Ciss 345 pF VDS=25V,VGS=0V,F=1MHZ 2
Output Capacitance Coss 55 pF VDS=25V,VGS=0V,F=1MHZ 2
Reverse Transfer Capacitance Crss 32 pF VDS=25V,VGS=0V,F=1MHZ 2
Turn-on Delay Time td(on) 2.8 nS VDS=15V, ID=1A, RGEN=6Ω 2
Turn-on Rise Time tr 7.2 nS VDS=15V, ID=1A, RGEN=6Ω 2
Turn-Off Delay Time td(off) 15.8 nS VDS=15V, ID=1A, RGEN=6Ω 2
Turn-Off Fall Time tf 4.6 nS VDS=15V, ID=1A, RGEN=6Ω 2
Total Gate Charge Qg 4.1 nC VGS=4.5V, VDS=15V, ID=8A 2
Gate-Source Charge Qgs 1 nC VGS=4.5V, VDS=15V, ID=8A 2
Gate-Drain Charge Qgd 2.1 nC VGS=4.5V, VDS=15V, ID=8A 2

CAD (KiCad official)

  • Symbol: AGM315MN
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm315mn-etched.step / agm315mn-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm315mn.step / agm315mn.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (7 pp, sha256 0b7b66c97b98f9cf, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF