component
AGM314MD
Public Made by Adomby adom
AGM Semi MOSFETs, TO-252-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| agm314md-etched.glb | 16d ago |
| agm314md-etched.step | 16d ago |
| agm314md-hero.glb | 16d ago |
| agm314md-hero.overlay.json | 16d ago |
| agm314md.glb | 16d ago |
| agm314md.kicad_mod | 16d ago |
| agm314md.kicad_sym | 16d ago |
| agm314md.lbr | 16d ago |
| agm314md.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
AGM314MD
AGM Semi · MOSFETs · TO-252-4
AGM314MD from AGM Semi, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1, 30V, 30A max continuous, 10mΩ typ RDS(on) at VGS=10V). |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), with VGS rated ±20V and threshold of 1.2V min to 2.2V max. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2, -30V, -20A max continuous, 21mΩ typ RDS(on) at VGS=-10V). |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2), with VGS rated ±20V and threshold of -1.2V min to -2.2V max. |
| 5 | D1/D2 | passive | Exposed tab, labelled D1/D2 in the pin-configuration drawing: drain connection for the N-channel (D1) and P-channel (D2) MOSFETs. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | TO-252-4 |
| Category | Transistors/Thyristors |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS | 30 | V | VGS=0V, N-Ch | 1 | ||
| Drain-Source Voltage (P-Ch) | VDS | -30 | V | VGS=0V, P-Ch | 1 | ||
| Gate-Source Voltage (N-Ch) | VGS | -20 | 20 | V | VDS=0V, N-Ch | 1 | |
| Gate-Source Voltage (P-Ch) | VGS | -20 | 20 | V | VDS=0V, P-Ch | 1 | |
| Drain Current-Continuous (N-Ch) | ID | 30 | A | TC=25℃ (Note 1), N-Ch | 1 | ||
| Drain Current-Continuous (N-Ch) | ID | 21 | A | TC=100℃, N-Ch | 1 | ||
| Drain Current-Continuous (P-Ch) | ID | -20 | A | TC=25℃ (Note 1), P-Ch | 1 | ||
| Drain Current-Continuous (P-Ch) | ID | -14 | A | TC=100℃, P-Ch | 1 | ||
| Drain Current-Pulsed (N-Ch) | IDM (pluse) | 120 | A | Note 2, N-Ch | 1 | ||
| Drain Current-Pulsed (P-Ch) | IDM (pluse) | -80 | A | Note 2, P-Ch | 1 | ||
| Total Power Dissipation (N-Ch) | PD | 29.7 | W | TC=25℃, N-Ch | 1 | ||
| Total Power Dissipation (P-Ch) | PD | 29.7 | W | TC=25℃, P-Ch | 1 | ||
| Total Power Dissipation (N-Ch) | PD | 11.9 | W | TC=100℃, N-Ch | 1 | ||
| Total Power Dissipation (P-Ch) | PD | 11.9 | W | TC=100℃, P-Ch | 1 | ||
| Avalanche energy (N-Ch) | EAS | 81 | mJ | Note 3, N-Ch | 1 | ||
| Avalanche energy (P-Ch) | EAS | 81 | mJ | Note 3, P-Ch | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 50 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 4.2 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage (N-Ch) | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current (N-Ch) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage (N-Ch) | VGS(th) | 1.2 | 1.6 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | 10 | 15 | mΩ | VGS=10V, ID=10A | 2 | |
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | 16 | 24 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Source-Drain Current (Body Diode) (N-Ch) | ISD | 30 | A | 2 | |||
| Forward on Voltage (N-Ch) | VSD | 1.2 | V | VGS=0V,IS=10A | 2 | ||
| Drain-Source Breakdown Voltage (P-Ch) | BVDSS | -30 | V | VGS=0V ID=-250μA | 3 | ||
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | -1 | μA | VDS=-30V,VGS=0V | 3 | ||
| Gate-Body Leakage Current (P-Ch) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 3 | |
| Gate Threshold Voltage (P-Ch) | VGS(th) | -1.2 | -1.5 | -2.2 | V | VDS=VGS,ID=-250μA | 3 |
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | 21 | 26 | mΩ | VGS=-10V, ID=-10A | 3 | |
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | 29 | 35 | mΩ | VGS=-4.5V, ID=-5A | 3 | |
| Source-Drain Current (Body Diode) (P-Ch) | ISD | -20 | A | 3 | |||
| Forward on Voltage (P-Ch) | VSD | -1.2 | V | VGS=0V,IS=-10A | 3 |
CAD (KiCad official)
- Symbol:
AGM314MD - Footprint:
Package_TO_SOT_SMD:TO-252-4 - 3D model: TO-252-4 (KiCad packages3D, STEP)
- 3D model files:
agm314md-etched.step/agm314md-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm314md.step/agm314md.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM Semi datasheet (10 pp, sha256
36cd46de18e2514f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).