component
AGM312ME
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AGM-Semi MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AGM312ME
AGM-Semi · MOSFETs · SOT-23-6
AGM312ME from AGM-Semi, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET (Q1, 30V, 5.5A), with VGS rated ±12V and threshold 0.5 to 1.3V. |
| 2 | S2 | passive | Source of the P-channel MOSFET (Q2, -30V, -4.4A). |
| 3 | G2 | input | Gate of the P-channel MOSFET (Q2), with VGS rated ±12V and threshold -0.5 to -1.3V. |
| 4 | D2 | passive | Drain of the P-channel MOSFET (Q2), with VDS rated -30V. |
| 5 | S1 | passive | Source of the N-channel MOSFET (Q1). |
| 6 | D1 | passive | Drain of the N-channel MOSFET (Q1), with VDS rated 30V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOT-23-6 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Ch Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| N-Ch Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| N-Ch Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| N-Ch Gate Threshold Voltage | VGS(th) | 0.5 | 1.3 | V | VDS=VGS,ID=250μA | 2 | |
| N-Ch Drain-Source On-State Resistance | RDS(on) | 24 | 30 | mΩ | VGS=10V, ID=4.2A | 2 | |
| N-Ch Drain-Source On-State Resistance | RDS(on) | 26 | 35 | mΩ | VGS=4.5V, ID=4A | 2 | |
| N-Ch Source-Drain Current (Body Diode) | ISD | 5.5 | A | 2 | |||
| N-Ch Forward on Voltage | VSD | 0.7 | 0.95 | V | VGS=0V,IS=4A | 2 | |
| P-Ch Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V ID=-250μA | 3 | ||
| P-Ch Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-30V,VGS=0V | 3 | ||
| P-Ch Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 3 | |
| P-Ch Gate Threshold Voltage | VGS(th) | -0.5 | -1.3 | V | VDS=VGS,ID=-250μA | 3 | |
| P-Ch Drain-Source On-State Resistance | RDS(on) | 38 | 50 | mΩ | VGS=-10V, ID=-4.2A | 3 | |
| P-Ch Drain-Source On-State Resistance | RDS(on) | 45 | 55 | mΩ | VGS=-4.5V, ID=-4A | 3 | |
| P-Ch Source-Drain Current (Body Diode) | ISD | -4.4 | A | 3 | |||
| P-Ch Forward on Voltage | VSD | -0.7 | -1 | V | VGS=0V, IS=-4A | 3 | |
| N-Ch Drain-Source Voltage | VDS | 30 | V | VGS=0V, TA=25℃ | 1 | ||
| P-Ch Drain-Source Voltage | VDS | -30 | V | VGS=0V, TA=25℃ | 1 | ||
| N-Ch Gate-Source Voltage | VGS | -12 | 12 | V | VDS=0V | 1 | |
| P-Ch Gate-Source Voltage | VGS | -12 | 12 | V | VDS=0V | 1 | |
| N-Ch Drain Current-Continuous | ID | 5.5 | A | TA=25℃ | 1 | ||
| N-Ch Drain Current-Continuous | ID | 3.3 | A | TA=100℃ | 1 | ||
| P-Ch Drain Current-Continuous | ID | -4.4 | A | TA=25℃ | 1 | ||
| P-Ch Drain Current-Continuous | ID | -2.6 | A | TA=100℃ | 1 | ||
| P-Ch Drain Current-Pulsed | IDM | -17.6 | A | 1 | |||
| Total Power Dissipation | PD | 1 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 125 | ℃/W | Steady State | 1 | ||
| N-Ch Forward Transconductance | gFS | 8 | S | VDS=5V,ID=5A | 2 | ||
| N-Ch Input Capacitance | Ciss | 390 | pF | VDS=15V,VGS=0V, F=1MHZ | 2 | ||
| N-Ch Gate resistance | Rg | 3 | Ω | VGS=0V, VDS=0V,f=1.0MHz | 2 | ||
| N-Ch Total Gate Charge | Qg | 4.5 | nC | VGS=10V, VDS=15V, ID=4A | 2 | ||
| P-Ch Forward Transconductance | gFS | 8 | S | VDS=-5V,ID=-4A | 3 | ||
| P-Ch Input Capacitance | Ciss | 409 | pF | VDS=-15V,VGS=0V, F=1MHZ | 3 | ||
| P-Ch Gate resistance | Rg | 12 | Ω | VGS=0V, VDS=-0V,f=1.0MHz | 3 | ||
| P-Ch Total Gate Charge | Qg | 4.8 | nC | VGS=-10V, VDS=-15V, ID=-4A | 3 |
CAD (KiCad official)
- Symbol:
AGM312ME - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
agm312me-etched.step/agm312me-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm312me.step/agm312me.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (10 pp, sha256
3433b222d1a97e62, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AGM312ME
**AGM-Semi** · MOSFETs · SOT-23-6
AGM312ME from AGM-Semi, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET (Q1, 30V, 5.5A), with VGS rated ±12V and threshold 0.5 to 1.3V. |
| 2 | S2 | passive | Source of the P-channel MOSFET (Q2, -30V, -4.4A). |
| 3 | G2 | input | Gate of the P-channel MOSFET (Q2), with VGS rated ±12V and threshold -0.5 to -1.3V. |
| 4 | D2 | passive | Drain of the P-channel MOSFET (Q2), with VDS rated -30V. |
| 5 | S1 | passive | Source of the N-channel MOSFET (Q1). |
| 6 | D1 | passive | Drain of the N-channel MOSFET (Q1), with VDS rated 30V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOT-23-6 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Ch Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V ID=250μA | 2 |
| N-Ch Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=30V,VGS=0V | 2 |
| N-Ch Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V,VDS=0V | 2 |
| N-Ch Gate Threshold Voltage | VGS(th) | 0.5 | | 1.3 | V | VDS=VGS,ID=250μA | 2 |
| N-Ch Drain-Source On-State Resistance | RDS(on) | | 24 | 30 | mΩ | VGS=10V, ID=4.2A | 2 |
| N-Ch Drain-Source On-State Resistance | RDS(on) | | 26 | 35 | mΩ | VGS=4.5V, ID=4A | 2 |
| N-Ch Source-Drain Current (Body Diode) | ISD | | | 5.5 | A | | 2 |
| N-Ch Forward on Voltage | VSD | | 0.7 | 0.95 | V | VGS=0V,IS=4A | 2 |
| P-Ch Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V ID=-250μA | 3 |
| P-Ch Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-30V,VGS=0V | 3 |
| P-Ch Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V,VDS=0V | 3 |
| P-Ch Gate Threshold Voltage | VGS(th) | -0.5 | | -1.3 | V | VDS=VGS,ID=-250μA | 3 |
| P-Ch Drain-Source On-State Resistance | RDS(on) | | 38 | 50 | mΩ | VGS=-10V, ID=-4.2A | 3 |
| P-Ch Drain-Source On-State Resistance | RDS(on) | | 45 | 55 | mΩ | VGS=-4.5V, ID=-4A | 3 |
| P-Ch Source-Drain Current (Body Diode) | ISD | | | -4.4 | A | | 3 |
| P-Ch Forward on Voltage | VSD | | -0.7 | -1 | V | VGS=0V, IS=-4A | 3 |
| N-Ch Drain-Source Voltage | VDS | | | 30 | V | VGS=0V, TA=25℃ | 1 |
| P-Ch Drain-Source Voltage | VDS | | | -30 | V | VGS=0V, TA=25℃ | 1 |
| N-Ch Gate-Source Voltage | VGS | -12 | | 12 | V | VDS=0V | 1 |
| P-Ch Gate-Source Voltage | VGS | -12 | | 12 | V | VDS=0V | 1 |
| N-Ch Drain Current-Continuous | ID | | | 5.5 | A | TA=25℃ | 1 |
| N-Ch Drain Current-Continuous | ID | | | 3.3 | A | TA=100℃ | 1 |
| P-Ch Drain Current-Continuous | ID | | | -4.4 | A | TA=25℃ | 1 |
| P-Ch Drain Current-Continuous | ID | | | -2.6 | A | TA=100℃ | 1 |
| P-Ch Drain Current-Pulsed | IDM | | | -17.6 | A | | 1 |
| Total Power Dissipation | PD | | | 1 | W | TA=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 125 | ℃/W | Steady State | 1 |
| N-Ch Forward Transconductance | gFS | | 8 | | S | VDS=5V,ID=5A | 2 |
| N-Ch Input Capacitance | Ciss | | 390 | | pF | VDS=15V,VGS=0V, F=1MHZ | 2 |
| N-Ch Gate resistance | Rg | | 3 | | Ω | VGS=0V, VDS=0V,f=1.0MHz | 2 |
| N-Ch Total Gate Charge | Qg | | 4.5 | | nC | VGS=10V, VDS=15V, ID=4A | 2 |
| P-Ch Forward Transconductance | gFS | | 8 | | S | VDS=-5V,ID=-4A | 3 |
| P-Ch Input Capacitance | Ciss | | 409 | | pF | VDS=-15V,VGS=0V, F=1MHZ | 3 |
| P-Ch Gate resistance | Rg | | 12 | | Ω | VGS=0V, VDS=-0V,f=1.0MHz | 3 |
| P-Ch Total Gate Charge | Qg | | 4.8 | | nC | VGS=-10V, VDS=-15V, ID=-4A | 3 |
## CAD (KiCad official)
- Symbol: `AGM312ME`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files: `agm312me-etched.step` / `agm312me-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm312me.step` / `agm312me.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [AGM-Semi datasheet](docs/agm312me-datasheet.pdf) (10 pp, sha256 `3433b222d1a97e62`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/agm312me-datasheet.pdf)