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AGM312D

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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PCB Footprint

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Datasheet

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Contents

README

markdown

AGM312D

AGM-Semi · MOSFETs · TO-252

AGM312D from AGM-Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS limited to ±20 V and threshold VGS(th) of 1.2 V to 2.2 V.
2 D passive Drain, also connected to the exposed tab; VDS rated 30 V and continuous ID 20 A (package limited) at Tc=25℃.
3 S passive Source; body diode continuous current is 20 A with VSD max 1.2 V at IS=15A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 14 20 mΩ VGS=10V, ID=15A 2
Drain-Source On-State Resistance RDS(on) 20 28.5 mΩ VGS=4.5V, ID=10A 2
Source-Drain Current (Body Diode) ISD 20 A VG=VD=0V , Force Current 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=15A 2
Drain-Source Voltage VDS 30 V VGS=0V, TA=25℃ 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 20 A Tc=25℃ 1
Drain Current-Continuous ID 14 A Tc=100℃ 1
Maximum Power Dissipation PD 31 w Tc=25℃ 1
Maximum Power Dissipation PD 12.5 w Tc=100℃ 1
Avalanche energy EAS 20 mJ TJ=25℃,VDD=15V,Vgs=10V,ID=9A,L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 4 ℃/W 1
Forward Transconductance gFS 7 S VDS=5V,ID=10A 2
Input Capacitance Ciss 295 pF VDS=15V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 70 pF VDS=15V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 63 pF VDS=15V,VGS=0V, F=1MHZ 2
Gate resistance Rg 5.6 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Total Gate Charge Qg 12 nC VGS=4.5V, VDS=10V, ID=15A 2

CAD (KiCad official)

  • Symbol: AGM312D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: agm312d-etched.step / agm312d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm312d.step / agm312d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (6 pp, sha256 f9f13e19c0e3c80c, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF