component
AGM310D
Public Made by Adomby adom
AGM-Semi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 5d ago |
| viewers | 5d ago |
| agm310d-etched.glb | 5d ago |
| agm310d-etched.step | 5d ago |
| agm310d-hero.glb | 5d ago |
| agm310d-hero.overlay.json | 5d ago |
| agm310d.glb | 5d ago |
| agm310d.kicad_mod | 5d ago |
| agm310d.kicad_sym | 5d ago |
| agm310d.lbr | 5d ago |
| agm310d.step | 5d ago |
| package.json | 5d ago |
| page.json | 5d ago |
| README.md | 5d ago |
AGM310D
AGM-Semi · MOSFETs · TO-252
AGM310D from AGM-Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V (VDS=0V), threshold VGS(th) 1.2 V min to 2.2 V max at ID=250μA. |
| 2 | D | passive | Drain, also connected to the exposed metal tab; VDS maximum 30 V, continuous ID 28 A at Tc=25℃ (package limited). |
| 3 | S | passive | Source; body-diode source-drain current up to 28 A, forward voltage 1.2 V max at IS=10A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | 28 | A | Tc=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous | ID | 22 | A | Tc=100℃ | 1 | ||
| Maximum Power Dissipation | PD | 40 | w | Tc=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 16 | w | Tc=100℃ | 1 | ||
| Avalanche energy | EAS | 56 | mJ | TJ=25℃,VDD=20V,Vgs=10V,ID=15A,L=0.5mH,RG=25ohm (Note 3) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 50 | ℃/W | Steady State | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 3.1 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 8 | 14 | mΩ | VGS=10V, ID=15A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 12 | 22 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Source-Drain Current (Body Diode) | ISD | 28 | A | VG=VD=0V, Force Current | 2 | ||
| Forward on Voltage | VSD | 1.2 | V | VGS=0V,IS=10A | 2 |
CAD (KiCad official)
- Symbol:
AGM310D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
agm310d-etched.step/agm310d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm310d.step/agm310d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (7 pp, sha256
6300a4affe6963d6, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).