# AGM30P35D

**AGM Semi** · MOSFETs · TO-252

AGM30P35D from AGM Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V and threshold VGS(th) is -1.2 V min to -2.2 V max at ID=-250μA. |
| 2 | D | passive | Drain, also connected to the exposed tab; drain-source voltage is -30 V max and continuous drain current is -20 A at TA=25℃ (package limited). |
| 3 | S | passive | Source; body-diode source-drain current is -20 A max. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | VGS=0V ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-30V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.4 | -2.2 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 36.5 | 43 | mΩ | VGS=-10V, ID=-10A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 50 | 60 | mΩ | VGS=-4.5V, ID=-5A | 2 |
| Source-Drain Current (Body Diode) | ISD |  |  | -20 | A |  | 2 |
| Forward on Voltage | VSD |  |  | -1.2 | V | VGS=0V,IS=-10A | 2 |
| Drain-Source Voltage | VDS |  |  | -30 | V | VGS=0V | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | VDS=0V | 1 |
| Drain Current-Continuous | ID |  |  | -20 | A | TA=25℃ (Note 1) | 1 |
| Drain Current-Continuous | ID |  |  | -13 | A | TA=100℃ | 1 |
| Drain Current-Pulsed | IDM |  |  | -80 | A | Note 2 | 1 |
| Maximum Power Dissipation | PD |  |  | 25.5 | w | TA=25℃ | 1 |
| Maximum Power Dissipation | PD |  |  | 10.2 | w | TA=100℃ | 1 |
| Avalanche energy | EAS |  |  | 36 | mJ | TJ=25℃,VDD=-15V,Vgs=-10V,ID=-12A,L=0.5mH,RG=25ohm (Note 3) | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 50 | ℃/W | Steady State | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 4.9 | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `AGM30P35D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `agm30p35d-etched.step` / `agm30p35d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm30p35d.step` / `agm30p35d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [AGM Semi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602902918127366144) (7 pp, sha256 `6cbcf55fdbb8f259`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/agm30p35d-datasheet.pdf)