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AGM30P20M

AGM-Semi · MOSFETs · SOP-8

AGM30P20M from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1 (VDS -30V, continuous ID -11A at Tc=25℃).
2 G1 input Gate of MOSFET 1 (VGS ±20V max, threshold -1.2V to -2.2V at ID=-250μA).
3 S2 passive Source of P-channel MOSFET 2 (VDS -30V, continuous ID -11A at Tc=25℃).
4 G2 input Gate of MOSFET 2 (VGS ±20V max, threshold -1.2V to -2.2V at ID=-250μA).
5 D2 passive Drain of MOSFET 2, tied to pin 6 (VDS -30V, RDS(on) 17mΩ typ at VGS=-10V).
6 D2 passive Drain of MOSFET 2, tied to pin 5 (VDS -30V, RDS(on) 17mΩ typ at VGS=-10V).
7 D1 passive Drain of MOSFET 1, tied to pin 8 (VDS -30V, RDS(on) 17mΩ typ at VGS=-10V).
8 D1 passive Drain of MOSFET 1, tied to pin 7 (VDS -30V, RDS(on) 17mΩ typ at VGS=-10V).

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1.2 -2.2 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(on) 17 21 mΩ VGS=-10V, ID=-5A 2
Drain-Source On-State Resistance RDS(on) 24.5 31 mΩ VGS=-4.5V, ID=-4A 2
Source-Drain Current (Body Diode) ISD -11 A 2
Forward on Voltage VSD -1.2 V VGS=0V,IS=-5A 2
Drain-Source Voltage VDS -30 V VGS=0V, TA=25℃ 1
Gate-Source Voltage VGS -20 20 V VDS=0V, TA=25℃ 1
Drain Current-Continuous ID -11 A Tc=25℃ 1
Drain Current-Continuous ID -7 A Tc=100℃ 1
Maximum Power Dissipation PD 3 w Tc=25℃ 1
Maximum Power Dissipation PD 1.2 w Tc=100℃ 1
Avalanche energy EAS 100 mJ TJ=25℃,VDD=-15V,Vgs=-10V,ID=-20A, L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 41.6 ℃/W Steady State 1
Forward Transconductance gFS 7 S VDS=-5V,ID=-4A 2
Input Capacitance Ciss 924 pF VDS=-15V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 135 pF VDS=-15V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 121 pF VDS=-15V,VGS=0V, F=1MHZ 2
Turn-on Delay Time td(on) 10 nS ID=-5A, VDS=-15V, VGS=-10V, RG=3.0Ω 2
Turn-on Rise Time tr 18 nS ID=-5A, VDS=-15V, VGS=-10V, RG=3.0Ω 2
Turn-Off Delay Time td(off) 130 nS ID=-5A, VDS=-15V, VGS=-10V, RG=3.0Ω 2
Turn-Off Fall Time tf 90 nS ID=-5A, VDS=-15V, VGS=-10V, RG=3.0Ω 2
Total Gate Charge Qg 20 nC VGS=-10V, VDS=-15V, ID=-8A 2
Gate-Source Charge Qgs 1.9 nC VGS=-10V, VDS=-15V, ID=-8A 2
Gate-Drain Charge Qgd 4.2 nC VGS=-10V, VDS=-15V, ID=-8A 2

CAD (KiCad official)

  • Symbol: AGM30P20M
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm30p20m-etched.step / agm30p20m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm30p20m.step / agm30p20m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 ed70e9ac8539d969, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF