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Contents

README

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AGM30P16S

AGM Semi · MOSFETs · SOP-8

AGM30P16S from AGM Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET (pin 1 marked on the top view); drain-source voltage rating is -30V.
2 S passive Source of the P-channel MOSFET; tied to the same source terminal as pins 1 and 3.
3 S passive Source of the P-channel MOSFET; tied to the same source terminal as pins 1 and 2.
4 G input Gate of the P-channel MOSFET; gate-source voltage rating is ±20V and threshold is -1.2V to -2.2V.
5 D passive Drain of the P-channel MOSFET; continuous drain current is -10A (package limited) at 25°C.
6 D passive Drain of the P-channel MOSFET; tied to the same drain terminal as pins 5, 7 and 8.
7 D passive Drain of the P-channel MOSFET; tied to the same drain terminal as pins 5, 6 and 8.
8 D passive Drain of the P-channel MOSFET; tied to the same drain terminal as pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer AGM Semi
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID -10 A Ta=25℃ (Note 1) 1
Drain Current-Continuous ID -6 A Ta=100℃ 1
Maximum Power Dissipation PD 2.5 w Ta=25℃ 1
Maximum Power Dissipation PD 1 w Ta=100℃ 1
Avalanche energy EAS 110 mJ Note 3: TJ=25℃,VDD=-15V,Vgs=-10V,ID=-21A,L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1.2 -1.5 -2.2 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(on) 15 18 mΩ VGS=-10V, ID=-10A 2
Drain-Source On-State Resistance RDS(on) 21 25 mΩ VGS=-4.5V, ID=-6A 2
Source-Drain Current (Body Diode) ISD -10 A 2
Forward on Voltage VSD -1.2 V VGS=0V,IS=-10A 2

CAD (KiCad official)

  • Symbol: AGM30P16S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm30p16s-etched.step / agm30p16s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm30p16s.step / agm30p16s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM Semi datasheet (7 pp, sha256 0ebd04bd055ccef0, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF