# AGM30P16D

**AGM Semi** · MOSFETs · TO-252

AGM30P16D from AGM Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, threshold -1.2 V min to -2.2 V max at ID=-250μA. |
| 2 | D | passive | Drain, also connected to the exposed tab; VDS rated -30 V and continuous current -25 A (package limited). |
| 3 | S | passive | Source; body diode continuous current up to -25 A with forward voltage max -1.2 V at IS=-10A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -30 | V | VGS=0V | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | VDS=0V | 1 |
| Drain Current-Continuous | ID |  |  | -25 | A | Tc=25℃ (Note 1) | 1 |
| Drain Current-Continuous | ID |  |  | 15 | A | Tc=100℃ | 1 |
| Drain Current-Pulsed | IDM |  |  | -100 | A | Note 2: pulse width limited by maximum junction temperature | 1 |
| Maximum Power Dissipation | PD |  |  | 30 | w | Tc=25℃ | 1 |
| Maximum Power Dissipation | PD |  |  | 12 | w | Tc=100℃ | 1 |
| Avalanche energy | EAS |  |  | 110 | mJ | Note 3: TJ=25℃,VDD=-15V,Vgs=-10V,ID=-21A,L=0.5mH,RG=25ohm | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 62 | ℃/W | Steady State | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 3.6 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-30V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.5 | -2.2 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 15 | 18 | mΩ | VGS=-10V, ID=-10A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 20 | 23 | mΩ | VGS=-4.5V, ID=-6A | 2 |
| Source-Drain Current (Body Diode) | ISD |  |  | -25 | A |  | 2 |
| Forward on Voltage | VSD |  |  | -1.2 | V | VGS=0V,IS=-10A | 2 |

## CAD (KiCad official)

- Symbol: `AGM30P16D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `agm30p16d-etched.step` / `agm30p16d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm30p16d.step` / `agm30p16d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [AGM Semi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602987023989166080) (7 pp, sha256 `c4fb38d00e80a3f2`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/agm30p16d-datasheet.pdf)