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AGM30P05D

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM30P05D

AGM-Semi · MOSFETs · TO-252

AGM30P05D from AGM-Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) of -1.2 V min, -1.6 V typ and -2.2 V max at ID=-250μA.
2 D passive Drain, also connected to the exposed tab; VDS rating is -30 V, with continuous current of -75 A (package limited) at Tc=25℃ and pulsed current of -300 A.
3 S passive Source; body diode continuous current is -75 A max, with forward voltage of -1.2 V max at IS=-15A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID -75 A Tc=25℃ (Note 1) 1
Drain Current-Continuous ID -60 A Tc=100℃ 1
Drain Current-Pulsed IDM -300 A Note 2 1
Maximum Power Dissipation PD 59.5 W Tc=25℃ 1
Maximum Power Dissipation PD 24 W Tc=100℃ 1
Avalanche energy EAS 272 mJ Note 3 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 2.1 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1.2 -1.6 -2.2 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(on) 5.5 7 mΩ VGS=-10V, ID=-15A 2
Drain-Source On-State Resistance RDS(on) 8.5 11.3 mΩ VGS=-4.5V, ID=-10A 2
Source-Drain Current (Body Diode) ISD -75 A 2
Forward on Voltage VSD -1.2 V VGS=0V,IS=-15A 2
Forward Transconductance gFS 20 S VDS=-5V,ID=-10A 2
Input Capacitance Ciss 2497 pF VDS=-15V,F=1MHZ 2
Output Capacitance Coss 240 pF VDS=-15V,F=1MHZ 2
Reverse Transfer Capacitance Crss 230 pF VDS=-15V,F=1MHZ 2
Gate resistance Rg 9.1 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 14 nS VGS=-10V,VDS=-15V,ID=-30A,Rl=3.0Ω 2
Turn-on Rise Time tr 20 nS VGS=-10V,VDS=-15V,ID=-30A,Rl=3.0Ω 2
Turn-Off Delay Time td(off) 56 nS VGS=-10V,VDS=-15V,ID=-30A,Rl=3.0Ω 2
Turn-Off Fall Time tf 48 nS VGS=-10V,VDS=-15V,ID=-30A,Rl=3.0Ω 2
Total Gate Charge Qg 32 nC VGS=-10V, VDS=-15V, ID=-20A 2
Gate-Source Charge Qgs 6.6 nC VGS=-10V, VDS=-15V, ID=-20A 2
Gate-Drain Charge Qgd 8 nC VGS=-10V, VDS=-15V, ID=-20A 2

CAD (KiCad official)

  • Symbol: AGM30P05D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: agm30p05d-etched.step / agm30p05d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm30p05d.step / agm30p05d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (9 pp, sha256 b7b78099256df8a5, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF