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AGM308MN

Public Made by Adom

by adom

AGM Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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AGM308MN

AGM Semi · MOSFETs · SOP-8

AGM308MN from AGM Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (pin 1 marked by the dot on the package); VDS rating 30V.
2 G1 input Gate of MOSFET 1; gate-source voltage limited to ±20V.
3 S2 passive Source of MOSFET 2; VDS rating 30V.
4 G2 input Gate of MOSFET 2; gate-source voltage limited to ±20V.
5 D2 passive Drain of MOSFET 2, tied with pin 6; drain-source voltage 30V max.
6 D2 passive Drain of MOSFET 2, tied with pin 5; drain-source voltage 30V max.
7 D1 passive Drain of MOSFET 1, tied with pin 8; drain-source voltage 30V max.
8 D1 passive Drain of MOSFET 1, tied with pin 7; drain-source voltage 30V max.

Key specifications

Parameter Value
Manufacturer AGM Semi
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (VGS=0V) VDS 30 V VGS=0V 1
Gate-Source Voltage (VDS=0V) VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 15 A Ta=25℃ (Note 1) 1
Drain Current-Continuous ID 10 A Ta=100℃ 1
Drain Current-Pulsed IDM (pluse) 60 A Note 2 1
Maximum Power Dissipation PD 2.5 w Ta=25℃ 1
Maximum Power Dissipation PD 1 w Ta=100℃ 1
Avalanche energy EAS 132 mJ Note 3: TJ=25℃, VDD=20V, Vgs=10V, ID=23A, L=0.5mH, RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.5 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 8.8 10 mΩ VGS=10V, ID=20A 2
Drain-Source On-State Resistance RDS(on) 11 14 mΩ VGS=4.5V, ID=15A 2
Source-Drain Current (Body Diode) ISD 15 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=25A 2

CAD (KiCad official)

  • Symbol: AGM308MN
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm308mn-etched.step / agm308mn-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm308mn.step / agm308mn.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM Semi datasheet (7 pp, sha256 6899fcc4359dac34, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF