component
AGM304S
Public Made by Adomby adom
AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AGM304S
AGM-Semi · MOSFETs · SOP-8
AGM304S from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (pin 1 marked on top view), tied with pins 2 and 3; body diode source-drain current rated up to 17 A. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3; continuous drain current is 17 A at TA=25℃ (package limited). |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2; gate-source voltage limit is ±20 V. |
| 4 | G | input | Gate of the MOSFET with a threshold of 1.2 V min to 2.2 V max at ID=250μA and an absolute maximum VGS of ±20 V. |
| 5 | D | passive | Drain of the MOSFET, tied with pins 6, 7 and 8; drain-source voltage rated 30 V. |
| 6 | D | passive | Drain of the MOSFET, tied with pins 5, 7 and 8; RDS(on) is 5.2 mΩ typ at VGS=10 V, ID=12 A. |
| 7 | D | passive | Drain of the MOSFET, tied with pins 5, 6 and 8; pulsed drain current is 68 A. |
| 8 | D | passive | Drain of the MOSFET, tied with pins 5, 6 and 7; breakdown voltage BVDSS is 30 V min at ID=250μA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 5.2 | 6.8 | mΩ | VGS=10V, ID=12A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 6 | 8.5 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Source-Drain Current (Body Diode) | ISD | 17 | A | 2 | |||
| Forward on Voltage | VSD | 1.2 | V | VGS=0V,IS=12A | 2 | ||
| Drain-Source Voltage | VDS | 30 | V | VGS=0V, TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V, TA=25℃ | 1 | |
| Continuous Drain Current | ID | 17 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | 12 | A | TA=100℃ | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | TA=100℃ | 1 | ||
| Avalanche Energy | EAS | 272 | mJ | TJ=25℃,VDD=20V,Vgs=10V,ID=33A,L=0.5mH,RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | Steady State | 1 | ||
| Forward Transconductance | gFS | 16 | S | VDS=5V,ID=10A | 2 | ||
| Input Capacitance | Ciss | 1500 | pF | VDS=15V,VGS=0V,F=1MHZ | 2 | ||
| Output Capacitance | Coss | 280 | pF | VDS=15V,VGS=0V,F=1MHZ | 2 | ||
| Reverse Transfer Capacitance | Crss | 140 | pF | VDS=15V,VGS=0V,F=1MHZ | 2 | ||
| Gate resistance | Rg | 1.3 | Ω | VGS=0V, VDS=0V,f=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 20 | nS | VGS=10V,VDS=15V, RL=0.75Ω,RGEN=3.3Ω | 2 | ||
| Turn-on Rise Time | tr | 15 | nS | VGS=10V,VDS=15V, RL=0.75Ω,RGEN=3.3Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 60 | nS | VGS=10V,VDS=15V, RL=0.75Ω,RGEN=3.3Ω | 2 | ||
| Turn-Off Fall Time | tf | 11 | nS | VGS=10V,VDS=15V, RL=0.75Ω,RGEN=3.3Ω | 2 | ||
| Total Gate Charge | Qg | 16 | nC | VGS=10V, VDS=25V, ID=10A | 2 | ||
| Gate-Source Charge | Qgs | 8 | nC | VGS=10V, VDS=25V, ID=10A | 2 | ||
| Gate-Drain Charge | Qgd | 5 | nC | VGS=10V, VDS=25V, ID=10A | 2 |
CAD (KiCad official)
- Symbol:
AGM304S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
agm304s-etched.step/agm304s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm304s.step/agm304s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (7 pp, sha256
6653ee25072f7d6d, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AGM304S
**AGM-Semi** · MOSFETs · SOP-8
AGM304S from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (pin 1 marked on top view), tied with pins 2 and 3; body diode source-drain current rated up to 17 A. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3; continuous drain current is 17 A at TA=25℃ (package limited). |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2; gate-source voltage limit is ±20 V. |
| 4 | G | input | Gate of the MOSFET with a threshold of 1.2 V min to 2.2 V max at ID=250μA and an absolute maximum VGS of ±20 V. |
| 5 | D | passive | Drain of the MOSFET, tied with pins 6, 7 and 8; drain-source voltage rated 30 V. |
| 6 | D | passive | Drain of the MOSFET, tied with pins 5, 7 and 8; RDS(on) is 5.2 mΩ typ at VGS=10 V, ID=12 A. |
| 7 | D | passive | Drain of the MOSFET, tied with pins 5, 6 and 8; pulsed drain current is 68 A. |
| 8 | D | passive | Drain of the MOSFET, tied with pins 5, 6 and 7; breakdown voltage BVDSS is 30 V min at ID=250μA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=30V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 5.2 | 6.8 | mΩ | VGS=10V, ID=12A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 6 | 8.5 | mΩ | VGS=4.5V, ID=10A | 2 |
| Source-Drain Current (Body Diode) | ISD | | | 17 | A | | 2 |
| Forward on Voltage | VSD | | | 1.2 | V | VGS=0V,IS=12A | 2 |
| Drain-Source Voltage | VDS | | | 30 | V | VGS=0V, TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | VDS=0V, TA=25℃ | 1 |
| Continuous Drain Current | ID | | | 17 | A | TA=25℃ | 1 |
| Continuous Drain Current | ID | | | 12 | A | TA=100℃ | 1 |
| Maximum Power Dissipation | PD | | | 2.5 | W | TA=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 1 | W | TA=100℃ | 1 |
| Avalanche Energy | EAS | | | 272 | mJ | TJ=25℃,VDD=20V,Vgs=10V,ID=33A,L=0.5mH,RG=25ohm | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 50 | ℃/W | Steady State | 1 |
| Forward Transconductance | gFS | | 16 | | S | VDS=5V,ID=10A | 2 |
| Input Capacitance | Ciss | | 1500 | | pF | VDS=15V,VGS=0V,F=1MHZ | 2 |
| Output Capacitance | Coss | | 280 | | pF | VDS=15V,VGS=0V,F=1MHZ | 2 |
| Reverse Transfer Capacitance | Crss | | 140 | | pF | VDS=15V,VGS=0V,F=1MHZ | 2 |
| Gate resistance | Rg | | 1.3 | | Ω | VGS=0V, VDS=0V,f=1.0MHz | 2 |
| Turn-on Delay Time | td(on) | | 20 | | nS | VGS=10V,VDS=15V, RL=0.75Ω,RGEN=3.3Ω | 2 |
| Turn-on Rise Time | tr | | 15 | | nS | VGS=10V,VDS=15V, RL=0.75Ω,RGEN=3.3Ω | 2 |
| Turn-Off Delay Time | td(off) | | 60 | | nS | VGS=10V,VDS=15V, RL=0.75Ω,RGEN=3.3Ω | 2 |
| Turn-Off Fall Time | tf | | 11 | | nS | VGS=10V,VDS=15V, RL=0.75Ω,RGEN=3.3Ω | 2 |
| Total Gate Charge | Qg | | 16 | | nC | VGS=10V, VDS=25V, ID=10A | 2 |
| Gate-Source Charge | Qgs | | 8 | | nC | VGS=10V, VDS=25V, ID=10A | 2 |
| Gate-Drain Charge | Qgd | | 5 | | nC | VGS=10V, VDS=25V, ID=10A | 2 |
## CAD (KiCad official)
- Symbol: `AGM304S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `agm304s-etched.step` / `agm304s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm304s.step` / `agm304s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [AGM-Semi datasheet](docs/agm304s-datasheet.pdf) (7 pp, sha256 `6653ee25072f7d6d`, retrieved 2026-10-24, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/agm304s-datasheet.pdf)