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Ray Publish 0.1.0 b269e44 8d ago

AGM304D

AGM-Semi · MOSFETs · TO-252

AGM304D from AGM-Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with a threshold of 1.2 V min to 2.2 V max at ID=250μA.
2 D passive Drain, also connected to the exposed tab; VDS max 30 V and continuous ID 100 A at Tc=25℃ (package limited).
3 S passive Source; body diode continuous source current up to 100 A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 2.8 4 mΩ VGS=10V, ID=20A 2
Drain-Source On-State Resistance RDS(on) 4.3 5.6 mΩ VGS=4.5V, ID=15A 2
Source-Drain Current (Body Diode) ISD 100 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=20A 2
Reverse Recovery Time trr 23 ns IF=20A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 48 nc IF=20A , dI/dt=100A/µs , TJ=25℃ 2
Drain-Source Voltage VDS 30 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 100 A Tc=25℃ (Note 1) 1
Drain Current-Continuous ID 70 A Tc=100℃ 1
Drain Current-Pulsed IDM 400 A Note 2 1
Maximum Power Dissipation PD 55 w Tc=25℃ 1
Maximum Power Dissipation PD 22 w Tc=100℃ 1
Avalanche energy EAS 256 mJ Note 3: TJ=25℃,VDD=20V,Vgs=10V,ID=32A, L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient (Steady State) RθJA 50 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 2.3 ℃/W 1

CAD (KiCad official)

  • Symbol: AGM304D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: agm304d-etched.step / agm304d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm304d.step / agm304d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 4bbfa9f33c1cff11, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF