component

AGM302D1

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsagm302d1factory-2.0.0extractor-text

Verified AGM302D1

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AGM302D1 · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-5z16znml/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ agm302d1.kicad_sym✓ agm302d1.kicad_mod✓ agm302d1.step
Spot something wrong? Report it as an issue Propose a fix Records are signed by members of adom.
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
agm302d1 / README.md
History Download
Ray Publish 0.1.0 2541a32 4d ago

AGM302D1

AGM-Semi · MOSFETs · TO-252

AGM302D1 from AGM-Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20V, with threshold VGS(th) of 1.2V min, 1.5V typ and 2.2V max at ID=250µA.
2 D passive Drain, also connected to the exposed tab; VDS rating is 30V and continuous ID is 180A at Tc=25℃ (package limited).
3 S passive Source; body-diode source-drain current is 180A max with VSD of 1.2V max at IS=20A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.5 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 2.1 2.8 mΩ VGS=10V, ID=20A 2
Drain-Source On-State Resistance RDS(on) 2.8 4.5 mΩ VGS=4.5V, ID=15A 2
Source-Drain Current (Body Diode) ISD 180 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=20A 2
Drain-Source Voltage VDS 30 V VGS=0V, TA=25℃ 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 180 A Tc=25℃ 1
Drain Current-Continuous ID 120 A Tc=100℃ 1
Drain Current-Pulsed IDM 720 A 1
Maximum Power Dissipation PD 83 w Tc=25℃ 1
Maximum Power Dissipation PD 33 w Tc=100℃ 1
Avalanche energy EAS 576 mJ TJ=25℃,Vgs=10V Vdd=20V,ID=48A,L=0.5mH,Rg=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 40 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 1.5 ℃/W 1
Forward Transconductance gFS 32 S VDS=5V,ID=10A 2
Input Capacitance Ciss 4850 pF VDS=15V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 520 pF VDS=15V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 480 pF VDS=15V,VGS=0V, F=1MHZ 2
Gate resistance Rg 2.7 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 65 nS VGS=10V,VDS=15V RL=0.75Ω,RGEN=3.3Ω 2
Turn-on Rise Time tr 45 nS VGS=10V,VDS=15V RL=0.75Ω,RGEN=3.3Ω 2
Turn-Off Delay Time td(off) 30 nS VGS=10V,VDS=15V RL=0.75Ω,RGEN=3.3Ω 2
Turn-Off Fall Time tf 25 nS VGS=10V,VDS=15V RL=0.75Ω,RGEN=3.3Ω 2
Total Gate Charge Qg 100 nC VGS=10V, VDS=25V, ID=12A 2
Gate-Source Charge Qgs 14 nC VGS=10V, VDS=25V, ID=12A 2
Gate-Drain Charge Qgd 34 nC VGS=10V, VDS=25V, ID=12A 2

CAD (KiCad official)

  • Symbol: AGM302D1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: agm302d1-etched.step / agm302d1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm302d1.step / agm302d1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (7 pp, sha256 a20981c8f5f22ea3, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF