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AGM2N7002K3
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AGM Semi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AGM2N7002K3
AGM Semi · MOSFETs · SOT-23
AGM2N7002K3 from AGM Semi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V max (VDS=0V) and threshold VGS(th) of 1.2 V min to 2.2 V max at ID=250µA, and an integrated ESD protection diode. |
| 2 | S | passive | Source; current return terminal of the N-channel MOSFET, with continuous drain current 0.3 A at TA=25℃ and body diode ISD up to 0.3 A. |
| 3 | D | passive | Drain; switched terminal rated for VDS of 60 V max, continuous ID of 0.3 A (1.2 A pulsed), and RDS(on) of 1.9 Ω typ at VGS=10V, ID=0.3A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | 0.3 | A | TA=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous | ID | 0.18 | A | TA=100℃ | 1 | ||
| Drain Current-Pulsed | IDM (pluse) | 1.2 | A | Note 2: repetitive rating, pulse width limited by max junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | w | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 0.5 | w | TA=100℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 100 | ℃/W | Steady state (Note 1) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | 67 | V | VGS=0V ID=10μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 1.9 | 2.5 | Ω | VGS=10V, ID=0.3A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 2 | 3 | Ω | VGS=4.5V, ID=0.2A | 2 | |
| Source-Drain Current (Body Diode) | ISD | 0.3 | A | 2 | |||
| Forward on Voltage | VSD | 1.2 | V | VGS=0V,ISD=0.3A | 2 |
CAD (KiCad official)
- Symbol:
AGM2N7002K3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
agm2n7002k3-etched.step/agm2n7002k3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm2n7002k3.step/agm2n7002k3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM Semi datasheet (6 pp, sha256
1c87348017dac8fa, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AGM2N7002K3
**AGM Semi** · MOSFETs · SOT-23
AGM2N7002K3 from AGM Semi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V max (VDS=0V) and threshold VGS(th) of 1.2 V min to 2.2 V max at ID=250µA, and an integrated ESD protection diode. |
| 2 | S | passive | Source; current return terminal of the N-channel MOSFET, with continuous drain current 0.3 A at TA=25℃ and body diode ISD up to 0.3 A. |
| 3 | D | passive | Drain; switched terminal rated for VDS of 60 V max, continuous ID of 0.3 A (1.2 A pulsed), and RDS(on) of 1.9 Ω typ at VGS=10V, ID=0.3A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | VGS=0V | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | VDS=0V | 1 |
| Drain Current-Continuous | ID | | | 0.3 | A | TA=25℃ (Note 1) | 1 |
| Drain Current-Continuous | ID | | | 0.18 | A | TA=100℃ | 1 |
| Drain Current-Pulsed | IDM (pluse) | | | 1.2 | A | Note 2: repetitive rating, pulse width limited by max junction temperature | 1 |
| Maximum Power Dissipation | PD | | | 1.25 | w | TA=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 0.5 | w | TA=100℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient (Steady State) | RθJA | | | 100 | ℃/W | Steady state (Note 1) | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | 67 | | V | VGS=0V ID=10μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=60V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -10 | | 10 | μA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 1.9 | 2.5 | Ω | VGS=10V, ID=0.3A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 2 | 3 | Ω | VGS=4.5V, ID=0.2A | 2 |
| Source-Drain Current (Body Diode) | ISD | | | 0.3 | A | | 2 |
| Forward on Voltage | VSD | | | 1.2 | V | VGS=0V,ISD=0.3A | 2 |
## CAD (KiCad official)
- Symbol: `AGM2N7002K3`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `agm2n7002k3-etched.step` / `agm2n7002k3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm2n7002k3.step` / `agm2n7002k3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [AGM Semi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590922095754883072) (6 pp, sha256 `1c87348017dac8fa`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/agm2n7002k3-datasheet.pdf)