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Contents

README

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AGM2N7002

AGM-Semi · MOSFETs · SOT-23

AGM2N7002 from AGM-Semi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V absolute maximum, with threshold VGS(th) of 1.0 V min, 1.5 V typ and 2.5 V max at ID=250 µA.
2 S passive Source; body diode forward current ISD up to 0.3 A with VSD max 1.2 V at IS=0.1 A.
3 D passive Drain; drain-source voltage rated 60 V maximum, continuous drain current 0.3 A at Tc=25℃ and 1.2 A pulsed.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -10 10 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS,ID=250μA 2
Source-Drain Current (Body Diode) ISD 0.3 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=0.1A 2
Drain-Source Voltage VDS 60 V VGS=0V, TA=25℃ 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 0.3 A Tc=25℃ 1
Drain Current-Continuous ID 0.2 A Tc=100℃ 1
Pulsed Drain Current IDM 1.2 A Note 2 1
Maximum Power Dissipation PD 0.35 w Tc=25℃ 1
Maximum Power Dissipation PD 0.14 w Tc=100℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 357 ℃/W Steady State 1
Forward Transconductance gFS 0.4 S VDS=5V,ID=0.2A 2
Drain-Source On-State Resistance RDS(on) 0.95 Ω VGS=10V, ID=0.3A 2
Drain-Source On-State Resistance RDS(on) 1.25 Ω VGS=4.5V, ID=0.2A 2
Input Capacitance Ciss 28 pF VDS=25V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 11 pF VDS=25V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 4 pF VDS=25V,VGS=0V, F=1MHZ 2
Turn-on Delay Time td(on) 2 nS VGS=10V,VDS=10V, ID=0.2A,RGEN=10Ω 2
Turn-on Rise Time tr 15 nS VGS=10V,VDS=10V, ID=0.2A,RGEN=10Ω 2
Turn-Off Delay Time td(off) 4 nS VGS=10V,VDS=10V, ID=0.2A,RGEN=10Ω 2
Turn-Off Fall Time tf 20 nS VGS=10V,VDS=10V, ID=0.2A,RGEN=10Ω 2
Total Gate Charge Qg 1.7 nC VGS=4.5V, VDS=10V, ID=0.3A 2
Gate-Source Charge Qgs 0.3 nC VGS=4.5V, VDS=10V, ID=0.3A 2
Gate-Drain Charge Qgd 0.6 nC VGS=4.5V, VDS=10V, ID=0.3A 2

CAD (KiCad official)

  • Symbol: AGM2N7002
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: agm2n7002-etched.step / agm2n7002-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm2n7002.step / agm2n7002.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (6 pp, sha256 3ab920c7e1e074e4, retrieved 2026-11-12, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF