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Contents

README

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AGM2309EL

AGM-Semi · MOSFETs · SOT-23

AGM2309EL from AGM-Semi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; P-channel gate-source voltage limit is ±20 V, with threshold VGS(th) of -1.2 V min to -2.2 V max at ID=-250µA.
2 S passive Source; body diode continuous source-drain current is -2.0 A max, drain current rating -2.0 A at TA=25°C.
3 D passive Drain; drain-source voltage rated -60 V, continuous current -2.0 A at TA=25°C and pulsed -8.0 A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID -2 A TA=25℃ 1
Drain Current-Continuous ID -1.2 A TA=100℃ 1
Drain Current-Pulsed IDM -8 A 1
Maximum Power Dissipation PD 1 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 125 ℃/W Steady State 1
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1.2 -1.5 -2.2 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(on) 160 200 mΩ VGS=-10V, ID=-2A 2
Drain-Source On-State Resistance RDS(on) 200 300 mΩ VGS=-4.5V, ID=-1A 2
Source-Drain Current (Body Diode) ISD -2 A 2
Forward on Voltage VSD -1.2 V VGS=0V,IS=-2A 2
Input Capacitance Ciss 310 pF VDS=-30V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 22 pF VDS=-30V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 15 pF VDS=-30V,VGS=0V, F=1MHZ 2
Turn-on Delay Time td(on) 41 nS VGS=-10V,VDS=-30V, ID=-2A,RGEN=3.3Ω 2
Turn-on Rise Time tr 22 nS VGS=-10V,VDS=-30V, ID=-2A,RGEN=3.3Ω 2
Turn-Off Delay Time td(off) 25 nS VGS=-10V,VDS=-30V, ID=-2A,RGEN=3.3Ω 2
Turn-Off Fall Time tf 32 nS VGS=-10V,VDS=-30V, ID=-2A,RGEN=3.3Ω 2
Total Gate Charge Qg 5.4 nC VGS=-10V, VDS=-30V, ID=-2A 2
Gate-Source Charge Qgs 1.1 nC VGS=-10V, VDS=-30V, ID=-2A 2
Gate-Drain Charge Qgd 1.6 nC VGS=-10V, VDS=-30V, ID=-2A 2

CAD (KiCad official)

  • Symbol: AGM2309EL
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: agm2309el-etched.step / agm2309el-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm2309el.step / agm2309el.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (7 pp, sha256 62ca629e55107a16, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF