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AGM210S

AGM-Semi · MOSFETs · SOP-8

AGM210S from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET (pin 1 marked on package), with VDS rated 20 V and continuous drain current 10 A at Tc=25℃ (package limited).
2 S passive Source of the N-channel MOSFET, tied internally with the other source pins; body diode ISD max 10 A.
3 S passive Source of the N-channel MOSFET, tied internally with the other source pins; body diode ISD max 10 A.
4 G input Gate of the MOSFET, rated ±12 V gate-source with threshold VGS(th) 0.5 V min, 0.6 V typ, 1.2 V max at 250μA.
5 D passive Drain of the MOSFET, rated 20 V drain-source with RDS(on) 8.5 mΩ typ (14 mΩ max) at VGS=4.5V, ID=4A.
6 D passive Drain of the MOSFET, tied internally with the other drain pins; 40 A pulsed drain current maximum.
7 D passive Drain of the MOSFET, tied internally with the other drain pins; 40 A pulsed drain current maximum.
8 D passive Drain of the MOSFET, tied internally with the other drain pins; 40 A pulsed drain current maximum.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V VGS=0V 1
Gate-Source Voltage VGS -12 12 V VDS=0V 1
Drain Current-Continuous ID 10 A Tc=25℃ 1
Drain Current-Continuous ID 6.7 A Tc=100℃ 1
Drain Current-Pulsed IDM 40 A 1
Maximum Power Dissipation PD 2.5 w Tc=25℃ 1
Maximum Power Dissipation PD 1 w Tc=100℃ 1
Avalanche energy EAS 64 mJ TJ=25℃,VDD=15V,Vgs=10V,ID=16A,L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.5 0.6 1.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 8.5 14 mΩ VGS=4.5V, ID=4A 2
Drain-Source On-State Resistance RDS(on) 10.5 18 mΩ VGS=2.5V, ID=3A 2
Source-Drain Current (Body Diode) ISD 10 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=4A 2
Forward Transconductance gFS 10 S VDS=5V,ID=3A 2
Input Capacitance Ciss 720 pF VDS=10V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 120 pF VDS=10V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 105 pF VDS=10V,VGS=0V, F=1MHZ 2
Gate resistance Rg 3 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 8 nS VGS=4.5V,VDS=10V RGEN=10Ω 2
Turn-on Rise Time tr 22 nS VGS=4.5V,VDS=10V RGEN=10Ω 2
Turn-Off Delay Time td(off) 46 nS VGS=4.5V,VDS=10V RGEN=10Ω 2
Turn-Off Fall Time tf 31 nS VGS=4.5V,VDS=10V RGEN=10Ω 2
Total Gate Charge Qg 6.5 nC VGS=4.5V, VDS=10V, ID=1A 2
Gate-Source Charge Qgs 0.5 nC VGS=4.5V, VDS=10V, ID=1A 2
Gate-Drain Charge Qgd 1 nC VGS=4.5V, VDS=10V, ID=1A 2

CAD (KiCad official)

  • Symbol: AGM210S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm210s-etched.step / agm210s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm210s.step / agm210s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (9 pp, sha256 868d8c6baccd2518, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF