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AGM20T09C

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM20T09C

AGM-Semi · MOSFETs · TO-220

AGM20T09C from AGM-Semi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V (VDS=0V) with threshold VGS(th) of 2.0 to 4.0 V at ID=250μA.
2 D passive Drain (also connected to the metal tab); drain-source voltage 200 V max, continuous drain current 110 A at Tc=25℃ (package limited).
3 S passive Source; body-diode source-drain current up to 110 A with VSD max 1.2 V at IS=50A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 200 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=200V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 9.3 10.5 mΩ VGS=10V, ID=35A 2
Source-Drain Current (Body Diode) ISD 110 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=50A 2
Drain-Source Voltage VDS 200 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 110 A Tc=25℃ 1
Drain Current-Continuous ID 75 A Tc=100℃ 1
Maximum Power Dissipation PD 278 w Tc=25℃ 1
Maximum Power Dissipation PD 111 w Tc=100℃ 1
Avalanche energy EAS 1352 mJ TJ=25℃,VDD=50V,Vgs=10V,ID=52A,L=1mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 0.45 ℃/W 1
Forward Transconductance gFS 10 S VDS=5V,ID=10A 2
Input Capacitance Ciss 10656 pF VDS=100V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 389 pF VDS=100V,VGS=0V, F=1MHZ 2
Total Gate Charge Qg 145 nC VGS=10V, VDS=100V, ID=55A 2
Gate-Source Charge Qgs 49 nC VGS=10V, VDS=100V, ID=55A 2
Gate-Drain Charge Qgd 27 nC VGS=10V, VDS=100V, ID=55A 2
Turn-on Delay Time td(on) 46 nS VGS=10V,VDS=100V, ID=55A,RGEN=4.7Ω 2
Turn-on Rise Time tr 24 nS VGS=10V,VDS=100V, ID=55A,RGEN=4.7Ω 2
Turn-Off Delay Time td(off) 88 nS VGS=10V,VDS=100V, ID=55A,RGEN=4.7Ω 2
Turn-Off Fall Time tf 18 nS VGS=10V,VDS=100V, ID=55A,RGEN=4.7Ω 2
Reverse Recovery Time trr 185 nS IF=50A , dI/dt=100A/µs 2
Reverse Recovery Charge Qrr 469 nc IF=50A , dI/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: AGM20T09C
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: agm20t09c-etched.step / agm20t09c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm20t09c.step / agm20t09c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 338096650a785637, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF