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AGM208D

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM208D

AGM-Semi · MOSFETs · TO-252

AGM208D from AGM-Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the MOSFET with VGS limited to ±12 V and a threshold of 0.5 V min to 1.0 V max at ID=250μA.
2 D passive Drain, also connected to the exposed tab; VDS rated 20 V and continuous ID 50 A (package limited) at Tc=25℃.
3 S passive Source; body diode source-drain current is rated up to 50 A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.5 0.6 1 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 6.2 9 mΩ VGS=4.5V, ID=20A 2
Drain-Source On-State Resistance RDS(on) 9.5 13 mΩ VGS=2.5V, ID=15A 2
Source-Drain Current (Body Diode) ISD 50 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=20A 2
Drain-Source Voltage VDS 20 V VGS=0V, TA=25℃ 1
Gate-Source Voltage VGS -12 12 V VDS=0V, TA=25℃ 1
Drain Current-Continuous ID 50 A Tc=25℃ 1
Drain Current-Continuous ID 33 A Tc=100℃ 1
Drain Current-Pulsed IDM 200 A TA=25℃ 1
Maximum Power Dissipation PD 38 w Tc=25℃ 1
Maximum Power Dissipation PD 15 w Tc=100℃ 1
Avalanche energy EAS 36 mJ TJ=25℃,VDD=10V,Vgs=10V,ID=27A, L=0.1mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 3.3 ℃/W 1
Forward Transconductance gFS 20 S VDS=5V,ID=15A 2
Input Capacitance Ciss 1195 pF VDS=10V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 148 pF VDS=10V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 132 pF VDS=10V,VGS=0V, F=1MHZ 2
Gate resistance Rg 1.4 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Total Gate Charge Qg 13 nC VGS=4.5V, VDS=10V, ID=15A 2
Gate-Source Charge Qgs 2.5 nC VGS=4.5V, VDS=10V, ID=15A 2
Gate-Drain Charge Qgd 3.5 nC VGS=4.5V, VDS=10V, ID=15A 2
Turn-on Delay Time td(on) 8 nS VGS=4.5V,VDD=10V,ID=15A,RGEN=3Ω 2
Turn-on Rise Time tr 19 nS VGS=4.5V,VDD=10V,ID=15A,RGEN=3Ω 2
Turn-Off Delay Time td(off) 30 nS VGS=4.5V,VDD=10V,ID=15A,RGEN=3Ω 2
Turn-Off Fall Time tf 11 nS VGS=4.5V,VDD=10V,ID=15A,RGEN=3Ω 2
Reverse Recovery Time trr 7.5 ns IF=20A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 1.5 nc IF=20A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM208D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: agm208d-etched.step / agm208d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm208d.step / agm208d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 140082252f2d24ae, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF