# AGM18N10I

**AGM-Semi** · MOSFETs · TO-251

AGM18N10I from AGM-Semi, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the datasheet rates gate-source voltage at ±20 V, with a threshold of 1.2 V min, 1.7 V typ and 2.2 V max at ID=250 µA. |
| 2 | D | passive | Drain, also connected to the metal tab; rated for 100 V drain-source and 40 A continuous (package limited) at Tc=25 °C. |
| 3 | S | passive | Source; body-diode source-drain current is rated at 40 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | TO-251 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 100 | V | VGS=0V | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | VDS=0V | 1 |
| Drain Current-Continuous | ID |  |  | 40 | A | Tc=25℃ (Note 1) | 1 |
| Drain Current-Continuous | ID |  |  | 32 | A | Tc=100℃ | 1 |
| Maximum Power Dissipation | PD |  |  | 30 | w | Tc=25℃ | 1 |
| Maximum Power Dissipation | PD |  |  | 12 | w | Tc=100℃ | 1 |
| Avalanche energy | EAS |  |  | 22 | mJ | Note 3: TJ=25℃,VDD=50V,Vgs=10V ID=15A,L=0.5mH,RG=25ohm | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient (Steady State) | RθJA |  |  | 62 | ℃/W | Steady State (Note 1) | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 4.2 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 16 | 20 | mΩ | VGS=10V, ID=12A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 20 | 25 | mΩ | VGS=4.5V, ID=8A | 2 |
| Source-Drain Current (Body Diode) | ISD |  |  | 40 | A |  | 2 |
| Forward on Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=12A | 2 |

## CAD (KiCad official)

- Symbol: `AGM18N10I`
- Footprint: `Package_TO_SOT_THT:TO-251-3_Vertical`
- 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files: `agm18n10i-etched.step` / `agm18n10i-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm18n10i.step` / `agm18n10i.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [AGM-Semi datasheet](docs/agm18n10i-datasheet.pdf) (8 pp, sha256 `1a759f03d99a670d`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/agm18n10i-datasheet.pdf)