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AGM15T16D

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM15T16D

AGM-Semi · MOSFETs · TO-252

AGM15T16D from AGM-Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 2.5 V min, 3.2 V typ and 4.5 V max at ID=250μA.
2 D passive Drain, connected to the exposed tab; drain-source voltage 150 V max, continuous current 61 A at Tc=25℃ (package limited).
3 S passive Source; body-diode continuous current ISD up to 61 A with forward voltage VSD of 1.2 V max at ISD=20A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 150 V VGS=0V, TA=25℃ 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 61 A Tc=25℃ (Note 1) 1
Drain Current-Continuous ID 38 A Tc=100℃ 1
Drain Current-Pulsed IDM 244 A Note 2 1
Maximum Power Dissipation PD 139 W Tc=25℃ 1
Maximum Power Dissipation PD 56 W Tc=100℃ 1
Avalanche energy EAS 342 mJ Note 3 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 45 55 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 0.7 0.9 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 150 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=150V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2.5 3.2 4.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 14 16.5 mΩ VGS=10V, ID=20A 2
Source-Drain Current (Body Diode) ISD 61 A 2
Forward on Voltage VSD 1.2 V VGS=0V,ISD=20A 2
Forward Transconductance gFS 26 S VDS=5V,ID=10A 2
Input Capacitance Ciss 1603 pF VDS=75V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 196 pF VDS=75V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 7.5 pF VDS=75V,VGS=0V, F=1MHZ 2
Gate resistance Rg 1.8 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 7.1 nS VGS = 10V,VDS = 75V, RL = 3.75Ω, RGEN = 6Ω 2
Turn-on Rise Time tr 8.4 nS VGS = 10V,VDS = 75V, RL = 3.75Ω, RGEN = 6Ω 2
Turn-Off Delay Time td(off) 17 nS VGS = 10V,VDS = 75V, RL = 3.75Ω, RGEN = 6Ω 2
Turn-Off Fall Time tf 11 nS VGS = 10V,VDS = 75V, RL = 3.75Ω, RGEN = 6Ω 2
Total Gate Charge Qg 23 nC VGS=10V, VDS=75V, ID=20A 2
Gate-Source Charge Qgs 15.2 nC VGS=10V, VDS=75V, ID=20A 2
Gate-Drain Charge Qgd 7.7 nC VGS=10V, VDS=75V, ID=20A 2
Reverse Recovery Time trr 86 ns IF=20A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 137 nc IF=20A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM15T16D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: agm15t16d-etched.step / agm15t16d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm15t16d.step / agm15t16d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 830aa0eb185c6d08, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF