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AGM15T13C

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM15T13C

AGM-Semi · MOSFETs · TO-220

AGM15T13C from AGM-Semi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) of 2.0 V min to 4.0 V max at ID=250μA.
2 D passive Drain, also connected to the tab; drain-source voltage is 150 V max and continuous drain current is 99 A at Tc=25℃ (package limited).
3 S passive Source; body diode continuous current is 99 A max with forward voltage of 1.2 V max at IS=20A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 150 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 99 A Tc=25℃ (Note 1) 1
Drain Current-Continuous ID 70 A Tc=100℃ 1
Drain Current-Pulsed IDM 396 A (Note 2) 1
Maximum Power Dissipation PD 212 w Tc=25℃ 1
Maximum Power Dissipation PD 85 w Tc=100℃ 1
Avalanche energy EAS 672 mJ (Note 3) TJ=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 45 56 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 0.45 0.59 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 150 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=150V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 9 12 mΩ VGS=10V, ID=20A 2
Source-Drain Current (Body Diode) ISD 99 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=20A 2
Forward Transconductance gFS 43 S VDS=5V,ID=15A 2
Input Capacitance Ciss 2330 pF VDS=75V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 316 pF VDS=75V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 17 pF VDS=75V,VGS=0V, F=1MHZ 2
Gate resistance Rg 2.2 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 8.6 nS VGS=10V,VDS=72V,ID=20A,RGEN=3Ω 2
Turn-on Rise Time tr 17 nS VGS=10V,VDS=72V,ID=20A,RGEN=3Ω 2
Turn-Off Delay Time td(off) 28 nS VGS=10V,VDS=72V,ID=20A,RGEN=3Ω 2
Turn-Off Fall Time tf 22 nS VGS=10V,VDS=72V,ID=20A,RGEN=3Ω 2
Total Gate Charge Qg 36 nC VGS=10V, VDS=75V, ID=20A 2
Gate-Source Charge Qgs 10 nC VGS=10V, VDS=75V, ID=20A 2
Gate-Drain Charge Qgd 7.7 nC VGS=10V, VDS=75V, ID=20A 2
Reverse Recovery Time trr 76 ns IS=20A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 227 nc IS=20A, dI/dt=100A/µs, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM15T13C
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: agm15t13c-etched.step / agm15t13c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm15t13c.step / agm15t13c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 7c53d3a516479358, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF