component
AGM15P13E
Public Made by Adomby adom
AGM Semi MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| agm15p13e-etched.glb | 8d ago |
| agm15p13e-etched.step | 8d ago |
| agm15p13e-hero.glb | 8d ago |
| agm15p13e-hero.overlay.json | 8d ago |
| agm15p13e.glb | 8d ago |
| agm15p13e.kicad_mod | 8d ago |
| agm15p13e.kicad_sym | 8d ago |
| agm15p13e.lbr | 8d ago |
| agm15p13e.step | 8d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| README.md | 8d ago |
AGM15P13E
AGM Semi · MOSFETs · SOT-23-3
AGM15P13E from AGM Semi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET, with VGS rated ±10 V maximum and threshold VGS(th) of -0.4 V to -1.0 V at ID=-250µA. |
| 2 | S | passive | Source; P-channel MOSFET source terminal, with continuous body-diode current ISD of -8.0 A maximum. |
| 3 | D | passive | Drain; P-channel MOSFET drain, rated VDS -15 V maximum and ID -8.0 A continuous (package limited). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -15 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -10 | 10 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | -8 | A | Tc=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous | ID | -5.3 | A | Tc=100℃ | 1 | ||
| Drain Current-Continuous Pulsed | IDM | -32 | A | Note 2, pulsed | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | w | Tc=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 0.5 | w | Tc=100℃ | 1 | ||
| Avalanche energy | EAS | 84.5 | mJ | Note 3 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 100 | ℃/W | Steady State, Note 1 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -15 | -18 | V | VGS=0V ID=-250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-15V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±10V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.5 | -1 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 14.5 | 21 | mΩ | VGS=-4.5V, ID=-5A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 19 | 27 | mΩ | VGS=-2.5V, ID=-3A | 2 | |
| Source-Drain Current (Body Diode) | ISD | -8 | A | 2 | |||
| Forward on Voltage | VSD | -1.2 | V | VGS=0V,IS=-5A | 2 |
CAD (KiCad official)
- Symbol:
AGM15P13E - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
agm15p13e-etched.step/agm15p13e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm15p13e.step/agm15p13e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM Semi datasheet (9 pp, sha256
0902a1a89b6e462b, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).