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AGM15N10D-G

Public Made by Adom

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AGM-Semi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM15N10D-G

AGM-Semi · MOSFETs · TO-252

AGM15N10D-G from AGM-Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V (VGS), threshold 1.2 V min to 2.2 V max at VDS=VGS, ID=250μA.
2 D passive Drain, also connected to the exposed tab; drain-source voltage 100 V max, continuous drain current 16 A at Tc=25℃ (package limited).
3 S passive Source; body diode source-drain current up to 16 A with forward voltage 1.2 V max at IS=10A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Continuous Drain Current ID 16 A Tc=25℃, package limited 1
Continuous Drain Current ID 10 A Tc=100℃ 1
Pulsed Drain Current IDM 62 A Pulse width limited by max junction temperature 1
Maximum Power Dissipation PD 35 W Tc=25℃ 1
Maximum Power Dissipation PD 13 W Tc=100℃ 1
Avalanche energy EAS 6.25 mJ TJ=25℃,VDD=50V,Vgs=10V,ID=5A,L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62.5 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.7 2.2 V VDS=VGS,ID=250μA 2
Forward Transconductance gFS 6 S VDS=5V,ID=6A 2
Drain-Source On-State Resistance RDS(on) 68 90 mΩ VGS=10V, ID=10A 2
Drain-Source On-State Resistance RDS(on) 84 140 mΩ VGS=4.5V, ID=6A 2
Input Capacitance Ciss 520 pF VDS=50V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 40 pF VDS=50V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 2.4 pF VDS=50V,VGS=0V, F=1MHZ 2
Turn-on Delay Time td(on) 16.2 nS VGS=10V,VDS=50V,ID=10A,RGEN=6Ω 2
Turn-on Rise Time tr 3.2 nS VGS=10V,VDS=50V,ID=10A,RGEN=6Ω 2
Turn-Off Delay Time td(off) 13 nS VGS=10V,VDS=50V,ID=10A,RGEN=6Ω 2
Turn-Off Fall Time tf 22 nS VGS=10V,VDS=50V,ID=10A,RGEN=6Ω 2
Total Gate Charge Qg 6 nC VGS=10V, VDS=50V, ID=12A 2
Gate-Source Charge Qgs 1.1 nC VGS=10V, VDS=50V, ID=12A 2
Gate-Drain Charge Qgd 1.3 nC VGS=10V, VDS=50V, ID=12A 2
Source-Drain Current (Body Diode) ISD 16 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=10A 2
Reverse Recovery Time trr 45 ns Isd=10A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 63 nc Isd=10A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM15N10D-G
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: agm15n10d-g-etched.step / agm15n10d-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm15n10d-g.step / agm15n10d-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 f504566ef9f34f35, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF