component
AGM1405C1
Public Made by Adomby adom
AGM-Semi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAGM1405C1
AGM-Semi · MOSFETs · TO-220
AGM1405C1 from AGM-Semi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, with an absolute maximum gate-source voltage of ±20 V and a threshold voltage of 1.2 V min to 2.2 V max at ID=250 µA. |
| 2 | D | passive | Drain, rated for 40 V drain-source voltage and 130 A continuous current at Tc=25℃ (package limited). |
| 3 | S | passive | Source, which carries up to 130 A through the body diode (ISD) and is the reference for the ±20 V gate-source rating. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=±20V,VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 3.2 | 4.6 | mΩ | VGS=10V, ID=30A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 4 | 7 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Source-Drain Current (Body Diode) | ISD | 130 | A | VG=VD=0V,Force Current | 2 | ||
| Forward on Voltage | VSD | 1.2 | V | VGS=0V,IS=30A | 2 | ||
| Reverse Recovery Time | trr | 18 | ns | IF=30A , dI/dt=100A/µs , TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 40 | nc | 2 | |||
| Drain-Source Voltage (VGS=0V) | VDS | 40 | V | VGS=0V | 1 | ||
| Gate-Source Voltage (VDS=0V) | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | 130 | A | Tc=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous | ID | 100 | A | Tc=100℃ | 1 | ||
| Drain Current-Pulsed | IDM (pluse) | 400 | A | Note 2 | 1 | ||
| Maximum Power Dissipation | PD | 96 | w | Tc=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 38 | w | Tc=100℃ | 1 | ||
| Avalanche energy | EAS | 462 | mJ | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 62 | ℃/W | Steady State (Note 1) | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.3 | ℃/W | (Note 1) | 1 |
CAD (KiCad official)
- Symbol:
AGM1405C1 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
agm1405c1-etched.step/agm1405c1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm1405c1.step/agm1405c1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (8 pp, sha256
8fbaf88c37f4ada7, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).