# AGM1075S

**AGM Semi** · MOSFETs · SOP-8

AGM1075S from AGM Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, connected to pins 2 and 3. |
| 2 | S | passive | Source of the N-channel MOSFET, connected to pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, connected to pins 1 and 2. |
| 4 | G | input | Gate of the MOSFET; VGS is rated at ±20 V maximum and the threshold is 1.2 to 2.2 V. |
| 5 | D | passive | Drain of the MOSFET, rated at 100 V VDS and connected to pins 6, 7 and 8. |
| 6 | D | passive | Drain of the MOSFET, rated at 100 V VDS and connected to pins 5, 7 and 8. |
| 7 | D | passive | Drain of the MOSFET, rated at 100 V VDS and connected to pins 5, 6 and 8. |
| 8 | D | passive | Drain of the MOSFET, rated at 100 V VDS and connected to pins 5, 6 and 7. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 62 | 80 | mΩ | VGS=10V, ID=10A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 69 | 90 | mΩ | VGS=4.5V, ID=3A | 2 |
| Source-Drain Current (Body Diode) | ISD |  |  | 10 | A |  | 2 |
| Forward on Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=10A | 2 |
| Drain-Source Voltage | VDS |  |  | 100 | V | VGS=0V | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | VDS=0V | 1 |
| Drain Current-Continuous | ID |  |  | 10 | A | TA=25℃ (Note 1) | 1 |
| Drain Current-Continuous | ID |  |  | 6.2 | A | TA=100℃ | 1 |
| Drain Current-Pulsed | IDM (pluse) |  |  | 40 | A | Note 2 (pulse width limited by maximum junction temperature) | 1 |
| Maximum Power Dissipation | PD |  |  | 2.45 | w | TA=25℃ | 1 |
| Maximum Power Dissipation | PD |  |  | 0.98 | w | TA=100℃ | 1 |
| Avalanche energy | EAS |  |  | 16 | mJ | Note 3: TJ=25℃,VDD=50V,Vgs=10V,ID=8A,L=0.5mH,RG=25ohm | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 51 | ℃/W | Steady State | 1 |

## CAD (KiCad official)

- Symbol: `AGM1075S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `agm1075s-etched.step` / `agm1075s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm1075s.step` / `agm1075s.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [AGM Semi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602999666644697088) (9 pp, sha256 `50f6687a8586555e`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/agm1075s-datasheet.pdf)