component
AGM085N10F
Public Made by Adomby adom
AGM-Semi MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAGM085N10F
AGM-Semi · MOSFETs · TO-220F
AGM085N10F from AGM-Semi, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V max and a threshold of 1.2 V min to 2.2 V max at VDS=VGS, ID=250 μA. |
| 2 | D | passive | Drain; rated 100 V drain-source (VGS=0 V) and 80 A continuous at Tc=25 °C (package limited). |
| 3 | S | passive | Source; body diode conducts up to 80 A continuous (ISD) from source to drain. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | 80 | A | Tc=25℃ | 1 | ||
| Drain Current-Continuous | ID | 52.5 | A | Tc=100℃ | 1 | ||
| Maximum Power Dissipation | PD | 78 | w | Tc=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 31 | w | Tc=100℃ | 1 | ||
| Avalanche energy | EAS | 210 | mJ | Note 3: TJ=25℃, VDD=50V, Vgs=10V, ID=29A, L=0.5mH, RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 50 | ℃/W | Steady State | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.6 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 9 | 10.5 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 12.7 | 15 | mΩ | VGS=4.5V, ID=15A | 2 | |
| Source-Drain Current (Body Diode) | ISD | 80 | A | 2 | |||
| Forward on Voltage | VSD | 0.9 | 1.2 | V | VGS=0V,IS=20A | 2 |
CAD (KiCad official)
- Symbol:
AGM085N10F - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (8 pp, sha256
f7f76d83462f221a, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).