component

AGM03N85H

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsagm03n85hfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
agm03n85h / README.md
History Download
Ray Publish 0.1.0 6522666 7d ago

AGM03N85H

AGM-Semi · MOSFETs · TO-263

AGM03N85H from AGM-Semi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with a threshold of 2.0 to 4.0 V (3.0 V typ) at VDS=VGS, ID=250μA.
2 D passive Drain, also connected to the exposed metal tab; 85 V maximum drain-source voltage and 140 A continuous drain current (package limited) at Tc=25℃.
3 S passive Source; body-diode continuous current up to 140 A with VSD of 1.2 V max at IS=20A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 85 V VGS=0V, TA=25℃ 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 140 A Tc=25℃ 1
Drain Current-Continuous ID 116 A Tc=100℃ 1
Maximum Power Dissipation PD 227 W Tc=25℃ 1
Maximum Power Dissipation PD 90 W Tc=100℃ 1
Avalanche energy EAS 1156 mJ TJ=25℃, VDD=40V, Vgs=10V, ID=68A, L=0.5mH, RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 0.55 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 85 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=85V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 2.8 3.4 mΩ VGS=10V, ID=20A 2
Source-Drain Current (Body Diode) ISD 140 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=20A 2
Forward Transconductance gFS 10 S VDS=10V,ID=15A 2
Input Capacitance Ciss 6890 pF VDS=50V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 2500 pF VDS=50V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 140 pF VDS=50V,VGS=0V, F=1MHZ 2
Turn-on Delay Time td(on) 29 nS VGS=10V,VDS=50V,ID=10A,RGEN=3Ω 2
Turn-on Rise Time tr 33 nS VGS=10V,VDS=50V,ID=10A,RGEN=3Ω 2
Turn-Off Delay Time td(off) 48 nS VGS=10V,VDS=50V,ID=10A,RGEN=3Ω 2
Turn-Off Fall Time tf 26 nS VGS=10V,VDS=50V,ID=10A,RGEN=3Ω 2
Total Gate Charge Qg 102 nC VGS=10V, VDS=50V, ID=12A 2
Gate-Source Charge Qgs 30 nC VGS=10V, VDS=50V, ID=12A 2
Gate-Drain Charge Qgd 20 nC VGS=10V, VDS=50V, ID=12A 2
Reverse Recovery Time trr 82 ns IS=20A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 170 nc IS=20A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM03N85H
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: agm03n85h-etched.step / agm03n85h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm03n85h.step / agm03n85h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (9 pp, sha256 6ae009e6ea0df495, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF