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AGM025N08H

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM025N08H

AGM-Semi · MOSFETs · TO-263

AGM025N08H from AGM-Semi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with an absolute maximum gate-source voltage of ±20 V and a threshold of 2 V min to 4 V max at VDS=VGS, ID=250μA.
2 D passive Drain, connected to the exposed tab; rated 85 V drain-source with 180 A continuous current (package limited) at Tc=25℃.
3 S passive Source; the body diode conducts up to 180 A from source to drain, with VSD max 1.2 V at IS=50A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 85 V VGS=0V, TA=25℃ 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 180 A Tc=25℃ 1
Drain Current-Continuous ID 145.5 A Tc=100℃ 1
Maximum Power Dissipation PD 250 w Tc=25℃ 1
Maximum Power Dissipation PD 100 w Tc=100℃ 1
Avalanche energy EAS 1681 mJ TJ=25℃,VDD=40V,Vgs=10V,ID=82A,L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62.5 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 0.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 85 95 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=85V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 2.3 3 mΩ VGS=10V, ID=50A 2
Source-Drain Current (Body Diode) ISD 180 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=50A 2
Forward Transconductance gFS 15 S VDS=5V,ID=20A 2
Input Capacitance Ciss 8237 pF VDS=42.5V, VGS=0V, F=1MHZ 2
Output Capacitance Coss 1549 pF VDS=42.5V, VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 152 pF VDS=42.5V, VGS=0V, F=1MHZ 2
Turn-on Delay Time td(on) 32 nS VGS=10V,VDS=42.5V, RGEN=3Ω 2
Turn-on Rise Time tr 115 nS VGS=10V,VDS=42.5V, RGEN=3Ω 2
Turn-Off Delay Time td(off) 93 nS VGS=10V,VDS=42.5V, RGEN=3Ω 2
Turn-Off Fall Time tf 140 nS VGS=10V,VDS=42.5V, RGEN=3Ω 2
Total Gate Charge Qg 138.3 nC VGS=10V, VDS=42.5V, ID=50A 2
Gate-Source Charge Qgs 39.5 nC VGS=10V, VDS=42.5V, ID=50A 2
Gate-Drain Charge Qgd 36.8 nC VGS=10V, VDS=42.5V, ID=50A 2
Reverse Recovery Time trr 80 ns IF=50A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 196 nc IF=50A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM025N08H
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: agm025n08h-etched.step / agm025n08h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm025n08h.step / agm025n08h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (11 pp, sha256 711f2e620fbb61f0, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF