# AFGHL75T65SQDT

**onsemi** · IGBTs · TO-247-3L

AFGHL75T65SQDT from onsemi, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the IGBT, with VGES rated ±20 V (±30 V transient) and threshold VGE(th) of 3.4 V min, 4.9 V typ, 6.4 V max. |
| 2 | C | passive | Collector; VCES rated 650 V with continuous collector current of 80 A at TC = 25°C and 75 A at TC = 100°C. |
| 3 | E | passive | Emitter; main current return of the IGBT and anode of the co-packaged diode, with VCE(sat) of 1.6 V typ at IC = 75 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-247-3L |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-to-Emitter Voltage | VCES |  |  | 650 | V |  | 1 |
| Gate-to-Emitter Voltage | VGES | -20 |  | 20 | V |  | 1 |
| Transient Gate-to-Emitter Voltage | VGES | -30 |  | 30 | V | Transient | 1 |
| Collector Current | IC |  |  | 80 | A | TC = 25°C; value limited by bond wire | 1 |
| Collector Current | IC |  |  | 75 | A | TC = 100°C; value limited by bond wire | 1 |
| Pulsed Collector Current | ILM |  |  | 300 | A | VCC = 400 V, VGE = 15 V, IC = 300 A, RG = 17, Inductive Load | 1 |
| Diode Forward Current | IF |  |  | 80 | A | TC = 25°C | 1 |
| Diode Forward Current | IF |  |  | 75 | A | TC = 100°C | 1 |
| Pulsed Diode Maximum Forward Current | IFM |  |  | 300 | A | VCC = 400 V, VGE = 15 V, IC = 300 A, RG = 17, Inductive Load | 1 |
| Maximum Power Dissipation | PD |  |  | 375 | W | TC = 25°C | 1 |
| Maximum Power Dissipation | PD |  |  | 188 | W | TC = 100°C | 1 |
| Operating Junction / Storage Temperature Range | TJ, TSTG | -55 |  | 175 | °C |  | 1 |
| Maximum Lead Temp. for Soldering | TL |  |  | 300 | °C | 1/8" from case for 5 seconds | 1 |
| Thermal resistance junction-to-case, IGBT | RJC |  | 0.4 |  | °C/W |  | 2 |
| Thermal resistance junction-to-case, Diode | RJC |  | 0.65 |  | °C/W |  | 2 |
| Thermal resistance junction-to-ambient | RJA |  | 40 |  | °C/W |  | 2 |
| Collector-emitter breakdown voltage | BVCES | 650 |  |  | V | VGE = 0 V, IC = 1 mA | 2 |
| Collector-emitter cut-off current | ICES |  |  | 250 | µA | VGE = 0 V, VCE = 650 V | 2 |
| Gate leakage current | IGES | -400 |  | 400 | nA | VGE = 20 V, VCE = 0 V | 2 |
| Gate-emitter threshold voltage | VGE(th) | 3.4 | 4.9 | 6.4 | V | VGE = VCE, IC = 75 mA | 2 |
| Collector-emitter saturation voltage | VCE(sat) |  | 1.6 | 2.1 | V | VGE = 15 V, IC = 75 A | 2 |
| Collector-emitter saturation voltage | VCE(sat) |  | 1.95 |  | V | VGE = 15 V, IC = 75 A, TJ = 175°C | 2 |
| Diode Forward Voltage | VFM |  | 1.65 | 2.1 | V | IF = 75 A, TC = 25°C | 3 |
| Diode Forward Voltage | VFM |  | 1.55 |  | V | IF = 75 A, TC = 175°C | 3 |
| Temperature Coefficient of Breakdown Voltage | ΔBVCES/ΔTJ |  | 0.6 |  | V/°C | VGE = 0 V, IC = 1 mA | 2 |
| Input capacitance | Cies |  | 4617 |  | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz | 2 |
| Output capacitance | Coes |  | 152 |  | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz | 2 |
| Reverse transfer capacitance | Cres |  | 13 |  | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz | 2 |
| Gate charge total | Qg |  | 136 |  | nC | VCE = 400 V, IC = 75 A, VGE = 15 V | 2 |
| Gate-to-emitter charge | Qge |  | 25 |  | nC | VCE = 400 V, IC = 75 A, VGE = 15 V | 2 |
| Gate-to-collector charge | Qgc |  | 32 |  | nC | VCE = 400 V, IC = 75 A, VGE = 15 V | 2 |
| Turn-on delay time | td(on) |  | 24 |  | ns | TC = 25°C, VCC = 400 V, IC = 75 A, RG = 4.7, VGE = 15 V, Inductive Load | 2 |
| Rise time | tr |  | 44 |  | ns | TC = 25°C, VCC = 400 V, IC = 75 A, RG = 4.7, VGE = 15 V, Inductive Load | 2 |
| Turn-off delay time | td(off) |  | 106 |  | ns | TC = 25°C, VCC = 400 V, IC = 75 A, RG = 4.7, VGE = 15 V, Inductive Load | 2 |
| Fall time | tf |  | 68 |  | ns | TC = 25°C, VCC = 400 V, IC = 75 A, RG = 4.7, VGE = 15 V, Inductive Load | 2 |
| Total switching loss | Ets |  | 3.26 |  | mJ | TC = 25°C, VCC = 400 V, IC = 75 A, RG = 4.7, VGE = 15 V, Inductive Load | 2 |
| Diode Reverse Recovery Time | Trr |  | 75 |  | ns | IF = 75 A, dIF/dt = 200 A/µs, TC = 25°C | 3 |
| Diode Reverse Recovery Charge | Qrr |  | 173 |  | nC | IF = 75 A, dIF/dt = 200 A/µs, TC = 25°C | 3 |

## CAD (KiCad official)

- Symbol: `AFGHL75T65SQDT`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3L (KiCad packages3D, STEP)
- 3D model files: `afghl75t65sqdt-etched.step` / `afghl75t65sqdt-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `afghl75t65sqdt.step` / `afghl75t65sqdt.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/afghl75t65sqdt-d.pdf) (9 pp, sha256 `7b831c763cde128e`, retrieved 2026-10-30, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/afghl75t65sqdt-datasheet.pdf)