component
AFGHL75T65SQ
Public Made by Adomby adom
onsemi IGBTs, TO-247-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAFGHL75T65SQ
onsemi · IGBTs · TO-247-3L
AFGHL75T65SQ from onsemi, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-emitter voltage is rated ±20 V continuous and ±30 V transient, with a typical threshold of 4.9 V at IC = 75 mA. |
| 2 | C | passive | Collector (also connected to the package tab); collector-to-emitter voltage is rated 650 V and collector current is 80 A at TC = 25°C and 75 A at TC = 100°C. |
| 3 | E | passive | Emitter; the current return terminal of the IGBT, with VCE(sat) of 1.6 V typical at VGE = 15 V and IC = 75 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-247-3L |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-to-Emitter Voltage | VCES | 650 | V | 2 | |||
| Gate-to-Emitter Voltage | VGES | -20 | 20 | V | 2 | ||
| Transient Gate-to-Emitter Voltage | VGES | -30 | 30 | V | Transient | 2 | |
| Collector Current | IC | 80 | A | @ TC = 25°C, limited by bond wire | 2 | ||
| Collector Current | IC | 75 | A | @ TC = 100°C, limited by bond wire | 2 | ||
| Pulsed Collector Current | ILM | 300 | A | VCC = 400 V, VGE = 15 V, IC = 300 A, RG = 15, Inductive Load | 2 | ||
| Maximum Power Dissipation | PD | 375 | W | @ TC = 25°C | 2 | ||
| Maximum Power Dissipation | PD | 188 | W | @ TC = 100°C | 2 | ||
| Operating Junction / Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 2 | ||
| Maximum Lead Temp. for Soldering | TL | 265 | °C | 1/8" from case for 10 seconds | 2 | ||
| Thermal resistance junction-to-case, IGBT | RθJC | 0.4 | °C/W | 3 | |||
| Thermal resistance junction-to-ambient | RθJA | 40 | °C/W | 3 | |||
| Collector-emitter breakdown voltage | BVCES | 650 | V | VGE = 0 V, IC = 1 mA | 3 | ||
| Collector-emitter cut-off current | ICES | 250 | µA | VGE = 0 V, VCE = 650 V | 3 | ||
| Gate leakage current | IGES | -400 | 400 | nA | VGE = 20 V, VCE = 0 V | 3 | |
| Gate-emitter threshold voltage | VGE(th) | 3.4 | 4.9 | 6.4 | V | VGE = VCE, IC = 75 mA | 3 |
| Collector-emitter saturation voltage | VCE(sat) | 1.6 | 2.1 | V | VGE = 15 V, IC = 75 A | 3 | |
| Collector-emitter saturation voltage | VCE(sat) | 2 | V | VGE = 15 V, IC = 75 A, TJ = 175°C | 3 | ||
| Temperature Coefficient of Breakdown Voltage | ΔBVCES/ΔTJ | 0.6 | V/°C | VGE = 0 V, IC = 1 mA | 3 | ||
| Input capacitance | Cies | 4574 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz | 3 | ||
| Output capacitance | Coes | 289.4 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz | 3 | ||
| Reverse transfer capacitance | Cres | 11.2 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz | 3 | ||
| Gate charge total | Qg | 139 | nC | VCE = 400 V, IC = 75 A, VGE = 15 V | 3 | ||
| Gate-to-emitter charge | Qge | 25 | nC | VCE = 400 V, IC = 75 A, VGE = 15 V | 3 | ||
| Gate-to-collector charge | Qgc | 33 | nC | VCE = 400 V, IC = 75 A, VGE = 15 V | 3 | ||
| Turn-on delay time | td(on) | 25 | ns | TC = 25°C, VCC = 400 V, IC = 75 A, RG = 4.7, VGE = 15 V, Inductive Load | 3 | ||
| Rise time | tr | 46 | ns | TC = 25°C, VCC = 400 V, IC = 75 A, RG = 4.7, VGE = 15 V, Inductive Load | 3 | ||
| Turn-off delay time | td(off) | 106 | ns | TC = 25°C, VCC = 400 V, IC = 75 A, RG = 4.7, VGE = 15 V, Inductive Load | 3 | ||
| Fall time | tf | 67 | ns | TC = 25°C, VCC = 400 V, IC = 75 A, RG = 4.7, VGE = 15 V, Inductive Load | 3 | ||
| Total switching loss | Ets | 2.99 | mJ | TC = 25°C, VCC = 400 V, IC = 75 A, RG = 4.7, VGE = 15 V, Inductive Load | 3 | ||
| Total switching loss | Ets | 4.2 | mJ | TC = 175°C, VCC = 400 V, IC = 75 A, RG = 4.7, VGE = 15 V, Inductive Load | 4 |
CAD (KiCad official)
- Symbol:
AFGHL75T65SQ - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3L (KiCad packages3D, STEP)
- 3D model files:
afghl75t65sq-etched.step/afghl75t65sq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);afghl75t65sq.step/afghl75t65sq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (10 pp, sha256
0089ea81de5807d8, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).