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ADX112AMSOP10

analogysemi · Analog To Digital Converters (ADC) · MSOP-10

ADX112AMSOP10 from analogysemi, in a MSOP-10. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	SCLK	input	Serial clock input for the SPI interface.
2	CS	input	Chip select, active low; connect to GND if not used.
3	GND	power_in	Ground reference for the device; absolute maximum VDD to GND is -0.3 V to 7 V.
4	AIN0	input	Analog input 0; leave unconnected or tie to VDD if not used.
5	AIN1	input	Analog input 1; leave unconnected or tie to VDD if not used.
6	AIN2	input	Analog input 2; leave unconnected or tie to VDD if not used.
7	AIN3	input	Analog input 3; leave unconnected or tie to VDD if not used.
8	VDD	power_in	Power supply, 2 V to 5.5 V per the features list; connect a 100 nF decoupling capacitor to GND.
9	DOUT/DRDY	output	Serial data output combined with data ready; active low.
10	DIN	input	Serial data input.

Key specifications

Parameter	Value
Manufacturer	analogysemi
Package	MSOP-10
Category	Data Acquisition
Pins	10

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Power-Supply Voltage VDD to GND		-0.3		7	V		4
Input Current, Continuous (any pin except power supply pins)		-10		10	mA		4
Operating ambient temperature	TA	-40		125	°C		4
Junction temperature	TJ	-40		150	°C		4
Storage temperature	Tstg	-60		150	°C		4
ESD Human-body model (HBM)	V(ESD)	-6000		6000	V	Per ANSI/ESDA/JEDEC JS-001	4
ESD Charged-device model (CDM)	V(ESD)	-1500		1500	V	Per JEDEC JESD22-C101	4
Power Supply, VDD to GND	VDD	2		5.5	V		5
Operating ambient temperature	TA	-40		125	°C		5
Data Rate Variation		-10		10	%	All data rates	6
Integral Nonlinearity	INL		0.5	1	LSB	DR = 8SPS, FSR = ±2.048V	6
Offset Error (differential inputs)		-1.5	0.1	1.5	LSB	FSR = ±2.048V, differential inputs	6
Offset Drift				0.002	LSB/°C	FSR = ±2.048V; footnote 3: maximum value specified by characterization	6
Gain Error			0.01	0.1	%	FSR = ±2.048V, TA = 25°C	6
Gain Drift			8	30	ppm/°C	FSR = ±2.048V	6
Gain Drift				8	ppm/°C	FSR = ±0.256V; footnote 3: maximum value specified by characterization	6
Gain Match			0.01	0.1	%	Match between any two gains	6
Gain Channel Match			0.01	0.1	%	Match between any two inputs	6
Common-Mode Rejection Ratio	CMRR	110			dB	At DC, FSR = ±0.256V	6
Common-Mode Rejection Ratio	CMRR	105			dB	At DC, FSR = ±2.048V	6
Temperature Range		-40		125	°C		6
Temperature Sensor Accuracy		-0.5	0.2	0.5	°C	TA = 0°C to 70°C	6
Temperature Sensor Accuracy		-1	0.4	1	°C	TA = -40°C to 125°C	6
Temperature Sensor Accuracy vs. supply		-0.25	0.03125	0.25	°C/V		6
Input Leakage, High	IH	-10		10	μA	VIL = 5.5V	7
Input Leakage, Low	IL	-10		10	μA	VIL = GND	7
Supply Current, power down	IVDD		0.65	1	μA	Power down, TA = 25°C	7
Supply Current, operating	IVDD		145	170	μA	Operating, TA = 25°C	7
Delay Time, CS Falling Edge to First SCLK Rising Edge	tCSSC	100			ns		8
Delay Time, Final SCLK Falling Edge to CS Rising Edge	tSCCS	100			ns		8
Pulse Duration, CS High	tCSH	200			ns		8
SCLK Period	tSCLK	250			ns		8
Pulse Duration, SCLK High	tSPWH	100			ns		8
Pulse Duration, SCLK Low	tSPWL	100			ns		8
Pulse Duration, SCLK Low (reset limit)	tSPWL			28	ms		8
Setup Time, DIN Valid before SCLK Falling Edge	tDIST	50			ns		8
Hold Time, DIN Valid after SCLK Falling Edge	tDIHD	50			ns		8
Hold Time, SCLK Rising Edge to DOUT Invalid	tDOHD	0			ns		8
Propagation Delay Time, CS Falling Edge to DOUT Driven	tCSDOD			100	ns	DOUT load = 20pF // 100kΩ to GND	8
Propagation Delay Time, SCLK Rising Edge to Valid New DOUT	tDOPD	0		50	ns	DOUT load = 20pF // 100kΩ to GND	8
Propagation Delay Time, CS Rising Edge to DOUT High Impedance	tCSDOZ			100	ns	DOUT load = 20pF // 100kΩ to GND	8
Junction-to-Ambient Thermal Resistance, MSOP-10	RθJA		150		°C/W		5
Junction-to-Case (Top) Thermal Resistance, MSOP-10	RθJC(top)		54		°C/W		5
Junction-to-Board Thermal Resistance, MSOP-10	RθJB		90		°C/W		5
Junction-to-Top Characterization Parameter, MSOP-10	ψJT		3		°C/W		5
Junction-to-Board Characterization Parameter, MSOP-10	ψJB		86		°C/W		5
Junction-to-Case (Bottom) Thermal Resistance, MSOP-10	RθJC(bot)		90		°C/W		5

CAD (KiCad official)

Symbol: ADX112AMSOP10
Footprint: Package_SO:MSOP-10_3x3mm_P0.5mm
3D model: MSOP-10 (KiCad packages3D, STEP)
3D model files: adx112amsop10-etched.step / adx112amsop10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); adx112amsop10.step / adx112amsop10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: analogysemi datasheet (41 pp, sha256 91b8bde659dd2bd8, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF