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ADUM1252AWA+

Analog Devices Inc./Maxim Integrated · IC · SOIC-8

ADUM1252AWA+ from Analog Devices Inc./Maxim Integrated, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD1 power_in Side 1 supply voltage, independent of VDD2 and specified from 1.71V to 5.5V; bypass with 1nF and 0.1μF ceramic capacitors placed as close to the pin as possible.
2 SDA1 bidirectional Side 1 serial data input/output, translated to and from SDA2, implemented as an open-drain output that regulates logic-low to about 0.64V and sinks up to 5mA.
3 SCL1 bidirectional Side 1 serial clock input/output, translated to and from SCL2, implemented as an open-drain output that regulates logic-low to about 0.64V and sinks up to 5mA.
4 GND1 power_in Ground reference for side 1.
5 GND2 power_in Ground reference for side 2.
6 SCL2 bidirectional Side 2 serial clock input/output, translated to and from SCL1, implemented as an open-drain output with conventional (unregulated) logic-low and sinking up to 50mA.
7 SDA2 bidirectional Side 2 serial data input/output, translated to and from SDA1, implemented as an open-drain output with conventional (unregulated) logic-low and sinking up to 50mA.
8 VDD2 power_in Side 2 supply voltage, independent of VDD1 and specified from 1.71V to 5.5V; bypass with 1nF and 0.1μF ceramic capacitors placed as close to the pin as possible.

Key specifications

Parameter Value
Manufacturer Analog Devices Inc./Maxim Integrated
Package SOIC-8
Category
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage VDD1 relative to GND1 VDD1 1.71 5.5 V 3
Supply Voltage VDD2 relative to GND2 VDD2 1.71 5.5 V 3
Undervoltage-Lockout Threshold Side_ VUVLO_ 1.48 1.6 1.65 V VDD_ rising 3
Supply Current Side 1 IDD1 20 34 µA VDD1 = VDD2 = 1.8V - 5V, SDA1/SCL1 = VDD1 3
Supply Current Side 1 IDD1 200 250 µA VDD1 = VDD2 = 1.8V - 5V, SDA1/SCL1 = 400kHz square wave 3
Supply Current Side 1 IDD1 270 340 µA VDD1 = VDD2 = 1.8V - 5V, SDA1/SCL1 = 1MHz square wave 3
Supply Current Side 2 IDD2 21 35 µA VDD1 = VDD2 = 1.8V - 5V, SDA2/SCL2 = VDD2 3
Supply Current Side 2 IDD2 49 70 µA VDD1 = VDD2 = 1.8V - 5V, SDA2/SCL2 = GND2 3
Supply Current Side 2 IDD2 84 110 µA VDD1 = VDD2 = 1.8V - 5V, SDA2/SCL2 = 400kHz square wave 3
Supply Current Side 2 IDD2 146 180 µA VDD1 = VDD2 = 1.8V - 5V, SDA2/SCL2 = 1MHz square wave 3
Input High Voltage, SDA1/SCL1 VIH1 0.52 0.56 0.62 V Relative to GND1 3
Input Low Voltage, SDA1/SCL1 VIL1 0.47 0.51 0.56 V Relative to GND1 3
Output Low Voltage, SDA1/SCL1 VOL1 0.59 0.64 0.69 V Relative to GND1, I = 0.1mA - 5mA sink 3
Output Low Voltage, Side 2 VOL2 0.4 V SDA2/SCL2 to GND2, I = 50mA sink 4
Static Output Loading Side 1 ISDA1/SCL1 0.1 5 mA Side 1 4
Static Output Loading Side 2 ISDA2/SCL2 0.1 50 mA Side 2 4
Leakage Current IL -10 10 µA Device unpowered, SDA1/SCL1 = 5.5V, VDD1 = 0V 4
ESD Human Body Model ESD -8 8 kV Human Body Model, VDD1 to same side pins, VDD2 to same side pins 4
ESD Human Body Model ESD -17 17 kV Human Body Model, SDA1/SCL1 to GND1 4
ESD IEC 61000-4-2 contact discharge ESD -8 8 kV IEC 61000-4-2 contact discharge, SDA1/SCL1 to GND1 unpowered 4
ESD IEC 61000-4-2 contact discharge ESD -5 5 kV IEC 61000-4-2 contact discharge (GND2 to GND1), 8 Wide SOIC 4
Fall Time Side 1 tF1 8.8 20.3 36.1 ns SDA1/SCL1 = 0.7 x VDD1 to 0.3 x VDD1; 4.5V ≤ VDD1 ≤ 5.5V, CL1 = 40pF, R1 = 1.6kΩ 4
Fall Time Side 1 tF1 6.1 13.7 24.1 ns SDA1/SCL1 = 0.7 x VDD1 to 0.3 x VDD1; 3.0V ≤ VDD1 ≤ 3.6V, CL1 = 40pF, R1 = 1kΩ 4
Fall Time Side 1 tF1 4.6 10.4 18.5 ns SDA1/SCL1 = 0.7 x VDD1 to 0.75V; 2.25V ≤ VDD1 ≤ 2.75V, CL1 = 40pF, R1 = 810Ω 5
Fall Time Side 1 tF1 2.4 4.7 11.5 ns SDA1/SCL1 = 0.7 x VDD1 to 0.75V; 1.71V ≤ VDD1 ≤ 1.89V, CL1 = 40pF, R1 = 470Ω 5
Fall Time Side 1 tF1 15.4 34.7 64.7 ns SDA1/SCL1 = 0.9 x VDD1 to 0.9V; 4.5V ≤ VDD1 ≤ 5.5V, CL1 = 40pF, R1 = 1.6kΩ 5
Fall Time Side 1 tF1 9.1 19.7 35.9 ns SDA1/SCL1 = 0.9 x VDD1 to 0.9V; 3.0V ≤ VDD1 ≤ 3.6V, CL1 = 40pF, R1 = 1kΩ 5
Fall Time Side 1 tF1 6 12.2 23.3 ns SDA1/SCL1 = 0.9 x VDD1 to 0.9V; 2.25V ≤ VDD1 ≤ 2.75V, CL1 = 40pF, R1 = 810Ω 5
Fall Time Side 1 tF1 3.8 6.5 11.1 ns SDA1/SCL1 = 0.9 x VDD1 to 0.9V; 1.71V ≤ VDD1 ≤ 1.89V, CL1 = 40pF, R1 = 470Ω 5
Fall Time Side 2 tF2 11.8 18.6 30 ns SDA2/SCL2 = 0.7 x VDD2 to 0.3 x VDD2; 4.5V ≤ VDD2 ≤ 5.5V, CL2 = 400pF, R2 = 180Ω 5
Fall Time Side 2 tF2 9 13.8 21 ns SDA2/SCL2 = 0.7 x VDD2 to 0.3 x VDD2; 3.0V ≤ VDD2 ≤ 3.6V, CL2 = 400pF, R2 = 120Ω 5
Fall Time Side 2 tF2 7.6 11.6 17 ns SDA2/SCL2 = 0.7 x VDD2 to 0.3 x VDD2; 2.25V ≤ VDD2 ≤ 2.75V, CL2 = 400pF, R2 = 91Ω 5
Fall Time Side 2 tF2 6.5 9.5 13.4 ns SDA2/SCL2 = 0.7 x VDD2 to 0.3 x VDD2; 1.71V ≤ VDD2 ≤ 1.89V, CL2 = 400pF, R2 = 81Ω 5
Fall Time Side 2 tF2 25.7 41 63 ns SDA2/SCL2 = 0.9 x VDD2 to 0.4V; 4.5V ≤ VDD2 ≤ 5.5V, CL2 = 400pF, R2 = 180Ω 5
Fall Time Side 2 tF2 19 29 44.4 ns SDA2/SCL2 = 0.9 x VDD2 to 0.4V; 3.0V ≤ VDD2 ≤ 3.6V, CL2 = 400pF, R2 = 120Ω 5
Fall Time Side 2 tF2 15.5 24 36.3 ns SDA2/SCL2 = 0.9 x VDD2 to 0.4V; 2.25V ≤ VDD2 ≤ 2.75V, CL2 = 400pF, R2 = 91Ω 5
Fall Time Side 2 tF2 12.4 18 26.1 ns SDA2/SCL2 = 0.9 x VDD2 to 0.4V; 1.71V ≤ VDD2 ≤ 1.89V, CL2 = 400pF, R2 = 81Ω 5
Propagation Delay tPLH12 37.6 50 ns SDA1/SCL1 = 0.66V to SDA2/SCL2 = 0.7 x VDD2; 4.5V ≤ VDD_ ≤ 5.5V, CL1 = 20pF, R1 = 1.6kΩ, CL2 = 20pF, R2 = 180Ω 5
Propagation Delay tPLH12 35.9 48 ns SDA1/SCL1 = 0.66V to SDA2/SCL2 = 0.7 x VDD2; 3.0V ≤ VDD_ ≤ 3.6V, CL1 = 20pF, R1 = 1kΩ, CL2 = 20pF, R2 = 120Ω 5
Supply Voltage VDD1 to GND1 (absolute) VDD1 -0.3 6 V VDD1 to GND1 2
Supply Voltage VDD2 to GND2 (absolute) VDD2 -0.3 6 V VDD2 to GND2 2
SDA1, SCL1 to GND1 SDA1, SCL1 -0.3 6 V to GND1 2
SDA2, SCL2 to GND2 SDA2, SCL2 -0.3 6 V to GND2 2
Short-Circuit Continuous Current 20 mA SDA1, SCL1 to VDD1 2
Short-Circuit Continuous Current 100 mA SDA2, SCL2 to VDD2 2
Continuous Power Dissipation 8 WSOIC 471 mW 8 WSOIC, derate 5.88mW/°C above +70°C 2
Operating Temperature Range TA -40 125 °C 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -65 150 °C 2
Soldering Temperature (reflow) 260 °C Reflow 2
Junction-to-Ambient Thermal Resistance 8 Wide SOIC θJA 170 °C/W 8 Wide SOIC, JEDEC JESD51-7 four-layer board 2
Junction-to-Case Top Thermal Resistance 8 Wide SOIC θJC(TOP) 64 °C/W 8 Wide SOIC 2
Junction-to-Board Thermal Resistance 8 Wide SOIC θJB 60.9 °C/W 8 Wide SOIC 2
Junction-to-Case Top Thermal Characterization Parameter 8 Wide SOIC ψJT 12 °C/W 8 Wide SOIC 2
Junction-to-Board Thermal Characterization Parameter 8 Wide SOIC ψJB 62 °C/W 8 Wide SOIC 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing pet Reinforced insulation, maximum transient isolation voltage 4242VPK, maximum repetitive peak isolation voltage 630VPK. 13

CAD (KiCad official)

  • Symbol: ADUM1252AWA+
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: adum1252awa-etched.step / adum1252awa-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); adum1252awa.step / adum1252awa.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Analog Devices Inc./Maxim Integrated datasheet (22 pp, sha256 e24d8c3b32cc1778, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF