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Contents

README

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ADM3061EARZ-R7

Analog Devices · RS-485/RS-422 ICs · SOIC-8

ADM3061EARZ-R7 from Analog Devices, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 RO output Receiver output is high when (A − B) ≥ −30 mV and low when (A − B) ≤ −200 mV, and is tristated when the receiver is disabled by driving RE high.
2 RE input Active-low receiver enable input: driving it low enables the receiver and driving it high disables the receiver.
3 DE input Driver enable input: a high level enables the driver differential outputs A and B, and a low level places the driver output into a high impedance state.
4 DI input Transmit data input: data to be transmitted by the driver is applied to this pin.
5 GND power_in Ground connection for the device.
6 A bidirectional Noninverting driver output and receiver input; when the driver is disabled or VCC is powered down, this pin is put into a high impedance state to avoid overloading the bus.
7 B bidirectional Inverting driver output and receiver input; when the driver is disabled or VCC is powered down, this pin is put into a high impedance state to avoid overloading the bus.
8 VCC power_in Power supply of 3.0 V to 5.5 V; adding a 0.1 µF decoupling capacitor between VCC and GND is recommended.

Key specifications

Parameter Value
Manufacturer Analog Devices
Package SOIC-8
Category Communication Interface Chip/UART/485/232
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
No Load Supply Current ICC 3.5 7.5 mA DE = VIO, RE = 0 V 4
No Load Supply Current ICC 3 4.5 mA DE = 0 V, RE = 0 V 4
Supply Current, Data Rate = 500 kbps ICC 100 165 mA RL = 54 Ω, DE = VIO, RE = 0 V (VCC ≥ 4.5 V) 4
Supply Current, Data Rate = 500 kbps ICC 56 74 mA RL = 54 Ω, DE = VIO, RE = 0 V (VCC = 3.0 V) 4
Supply Current in Shutdown Mode ISHDN 210 450 µA DE = 0 V, RE = VIO 4
Output Voltage, Loaded /VOD2/ 2 2.5 V VCC ≥ 3.0 V, RL = 50 Ω, see Figure 38 4
Output Voltage, Loaded /VOD2/ 1.5 2.1 V VCC ≥ 3.0 V, RL = 27 Ω (RS-485), see Figure 38 4
Output Voltage, Loaded /VOD2/ 2.1 3.5 V VCC ≥ 4.5 V, RL = 50 Ω, see Figure 38 4
Output Voltage, Loaded /VOD2/ 2.1 3 V VCC ≥ 4.5 V, RL = 27 Ω (RS-485), see Figure 38 4
Output Voltage, Loaded (common-mode range) /VOD3/ 1.5 2.1 V VCC ≥ 3.0 V, −7 V ≤ VCM ≤ +12 V, see Figure 39 4
Output Voltage, Loaded (common-mode range) /VOD3/ 2.1 3 V VCC ≥ 4.5 V, −7 V ≤ VCM ≤ +12 V, see Figure 39 4
Change in Differential Input Voltage for /VOD/ ∆/VOD/ 0.2 V RL = 27 Ω or 50 Ω, see Figure 38 4
Common-Mode Output Voltage VOC 1.6 3 V RL = 27 Ω or 50 Ω, see Figure 38 4
Change in Common-Mode Voltage for /VOC/ ∆/VOC/ 0.2 V RL = 27 Ω or 50 Ω, see Figure 38 4
Output Short-Circuit Current IOS -250 250 mA −7 V < VOUT < +12 V 4
Output Leakage (Y, Z) IO 100 µA DE = 0 V, RE = 0 V, VCC = 0 V or 3.6 V, VIN = 12 V 4
Output Leakage (Y, Z) IO -100 µA DE = 0 V, RE = 0 V, VCC = 0 V or 3.6 V, VIN = −7 V 4
Input Current II -2 2 µA DE, RE, DI, 1.62 V ≤ VIO ≤ 5.5 V, 0 V ≤ VIN ≤ VIO 4
Differential Input Threshold Voltage VTH -200 -125 -30 mV −7 V < VCM < +12 V 4
Input Voltage Hysteresis VHYS 30 mV −7 V < VCM < +12 V 4
Input Current (A, B) II 0.1 0.25 mA DE = 0 V, VCC = powered/unpowered, VIN = 12 V 4
Input Current (A, B) II -0.2 -0.1 mA DE = 0 V, VCC = powered/unpowered, VIN = −7 V 4
Line Input Resistance RIN 48 96 kΩ −7 V ≤ VCM ≤ +12 V 4
Supply Voltage VCC 3 5.5 V 4
Operating Temperature Range (A grade) TA -40 85 °C A grade 3
Maximum VCC for 500 kbps data rate VCC 5.5 V 500 kbps data rate, 8-lead SOIC_N 3
VCC to GND VCC 6 V 8
Driver Output and Receiver Input Voltage -9 14 V 8
Operating Temperature Range -40 85 °C A grade 8
Storage Temperature Range -65 150 °C 8
Maximum Junction Temperature TJ 150 °C 8
Continuous Total Power Dissipation, 8-Lead SOIC_N 0.225 W 8-Lead SOIC_N 8
Lead Temperature Soldering (10 sec) 300 °C 10 sec 8
Lead Temperature Vapor Phase (60 sec) 215 °C 60 sec 8
Lead Temperature Infrared (15 sec) 220 °C 15 sec 8
ESD on Bus Pins IEC 61000-4-2 Contact Discharge -12 12 kV IEC 61000-4-2 contact discharge, bus pins (A, B, Y, Z) 8
ESD Human Body Model on Bus Pins -30 30 kV ≥ ±30 kV, bus pins (A, B, Y, Z) 8
ESD Human Body Model on All Other Pins -8 8 kV All other pins 8
Thermal Resistance Junction to Ambient, R-8 θJA 110.88 °C/W JEDEC 2S2P board, no bias 8
Thermal Resistance Junction to Case, R-8 θJC 58.63 °C/W junction to case 8

CAD (KiCad official)

  • Symbol: ADM3061EARZ-R7
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: adm3061earz-r7-etched.step / adm3061earz-r7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); adm3061earz-r7.step / adm3061earz-r7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Analog Devices datasheet (25 pp, sha256 7ce4130f0f613a46, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF