component
ADG419BRZ-REEL7
Public Made by Adomby adom
Analog Devices Analog Switches, Multiplexers, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ADG419BRZ-REEL7
Analog Devices · Analog Switches, Multiplexers · SOIC-8
ADG419BRZ-REEL7 from Analog Devices, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | bidirectional | Drain terminal that may be an input or an output of the analog switch. |
| 2 | S1 | bidirectional | Source terminal that may be an input or an output; S1 conducts to D when Logic is 0. |
| 3 | GND | power_in | Ground (0 V) reference; GND to VDD is limited to −0.3 V to +25 V and VSS to GND to +0.3 V to −25 V in the absolute maximum ratings. |
| 4 | VDD | power_in | Most positive power supply potential; VDD to VSS is rated at 44 V maximum and VDD to GND at −0.3 V to +25 V. |
| 5 | VL | power_in | Logic power supply (5 V), with VL to GND rated at −0.3 V to VDD + 0.3 V. |
| 6 | IN | input | Logic control input that selects the switch state; VINL maximum is 0.8 V and VINH minimum is 2.4 V, with analog/digital inputs rated VSS − 2 V to VDD + 2 V. |
| 7 | VSS | power_in | Most negative power supply potential in dual-supply applications, which may be connected to GND in single-supply applications. |
| 8 | S2 | bidirectional | Source terminal that may be an input or an output; S2 conducts to D when Logic is 1. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Analog Devices |
| Package | SOIC-8 |
| Category | Interface |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| RON, dual supply, B version, +25°C | RON | 35 | Ω | VDD = +13.5 V, VSS = −13.5 V | 3 | ||
| RON, dual supply, B version, −40°C to +125°C | RON | 45 | Ω | VDD = +13.5 V, VSS = −13.5 V | 3 | ||
| Source off leakage, dual supply, B version, +25°C | IS (Off) | -0.25 | 0.25 | nA | VD = ±15.5 V, VS = −15.5 V; see Figure 12 | 3 | |
| Source off leakage, dual supply, B version, −40°C to +125°C | IS (Off) | -15 | 15 | nA | VD = ±15.5 V, VS = −15.5 V; see Figure 12 | 3 | |
| Drain off leakage, dual supply, B version, +25°C | ID (Off) | -0.75 | 0.75 | nA | VD = ±15.5 V, VS = −15.5 V; see Figure 12 | 3 | |
| Drain off leakage, dual supply, B version, −40°C to +125°C | ID (Off) | -30 | 30 | nA | VD = ±15.5 V, VS = −15.5 V; see Figure 12 | 3 | |
| Channel on leakage, dual supply, B version, +25°C | ID, IS (On) | -0.75 | 0.75 | nA | VS = VD = ±15.5 V; see Figure 13 | 3 | |
| Channel on leakage, dual supply, B version, −40°C to +125°C | ID, IS (On) | -30 | 30 | nA | VS = VD = ±15.5 V; see Figure 13 | 3 | |
| Input high voltage (all temperatures) | VINH | 2.4 | V | 3 | |||
| Input low voltage (all temperatures) | VINL | 0.8 | V | 3 | |||
| Input current IINL or IINH (all temperatures) | IINL or IINH | -0.5 | 0.5 | μA | VIN = VINL or VINH | 3 | |
| Transition time, dual supply, B version, +25°C | tTRANSITION | 160 | ns | RL = 300 Ω, CL = 35 pF; VS1 = ±10 V, VS2 = ∓10 V; see Figure 14 | 3 | ||
| Transition time, dual supply, B version, −40°C to +125°C | tTRANSITION | 200 | ns | RL = 300 Ω, CL = 35 pF; VS1 = ±10 V, VS2 = ∓10 V; see Figure 14 | 3 | ||
| Break-before-make time delay, dual supply, 25°C | tD | 5 | ns | RL = 300 Ω, CL = 35 pF; VS1 = VS2 = ±10 V; see Figure 15 | 3 | ||
| Supply current IDD, dual supply, B version, +25°C | IDD | 1 | μA | VIN = 0 V or 5 V | 3 | ||
| Supply current IDD, dual supply, B version, −40°C to +125°C | IDD | 2.5 | μA | VIN = 0 V or 5 V | 3 | ||
| Negative supply current ISS, dual supply, B version, +25°C | ISS | 1 | μA | 3 | |||
| Negative supply current ISS, dual supply, B version, −40°C to +125°C | ISS | 2.5 | μA | 3 | |||
| Logic supply current IL, dual supply, B version, +25°C | IL | 1 | μA | VL = 5.5 V | 3 | ||
| Logic supply current IL, dual supply, B version, −40°C to +125°C | IL | 2.5 | μA | VL = 5.5 V | 3 | ||
| On resistance, single supply, B version, +25°C | RON | 60 | Ω | VDD = 10.8 V | 4 | ||
| On resistance, single supply, B version, −40°C to +125°C | RON | 70 | Ω | VDD = 10.8 V | 4 | ||
| Source off leakage, single supply, B version, +25°C | IS (Off) | -0.25 | 0.25 | nA | VD = 12.2 V/1 V, VS = 1 V/12.2 V; see Figure 12 | 4 | |
| Source off leakage, single supply, B version, −40°C to +125°C | IS (Off) | -15 | 15 | nA | VD = 12.2 V/1 V, VS = 1 V/12.2 V; see Figure 12 | 4 | |
| Drain off leakage, single supply, B version, +25°C | ID (Off) | -0.75 | 0.75 | nA | VD = 12.2 V/1 V, VS = 1 V/12.2 V; see Figure 12 | 4 | |
| Drain off leakage, single supply, B version, −40°C to +125°C | ID (Off) | -30 | 30 | nA | VD = 12.2 V/1 V, VS = 1 V/12.2 V; see Figure 12 | 4 | |
| Channel on leakage, single supply, B version, +25°C | ID, IS (On) | -0.75 | 0.75 | nA | VS = VD = 12.2 V/1 V; see Figure 13 | 4 | |
| Channel on leakage, single supply, B version, −40°C to +125°C | ID, IS (On) | -30 | 30 | nA | VS = VD = 12.2 V/1 V; see Figure 13 | 4 | |
| Transition time, single supply, B version, +25°C | tTRANSITION | 180 | ns | RL = 300 Ω, CL = 35 pF; VS1 = 0 V/8 V, VS2 = 8 V/0 V; see Figure 14 | 4 | ||
| Transition time, single supply, B version, −40°C to +125°C | tTRANSITION | 250 | ns | RL = 300 Ω, CL = 35 pF; VS1 = 0 V/8 V, VS2 = 8 V/0 V; see Figure 14 | 4 | ||
| Supply current IDD, single supply, B version, +25°C | IDD | 1 | μA | VIN = 0 V or 5 V | 4 | ||
| Supply current IDD, single supply, B version, −40°C to +125°C | IDD | 2.5 | μA | VIN = 0 V or 5 V | 4 | ||
| Logic supply current IL, single supply, B version, +25°C | IL | 1 | μA | VL = 5.5 V | 4 | ||
| Logic supply current IL, single supply, B version, −40°C to +125°C | IL | 2.5 | μA | VL = 5.5 V | 4 | ||
| Maximum voltage VDD to VSS | 44 | V | 5 | ||||
| VDD to GND | -0.3 | 25 | V | 5 | |||
| VSS to GND | -25 | 0.3 | V | 5 | |||
| Continuous current, S or D | 30 | mA | 5 | ||||
| Peak current, S or D | 100 | mA | Pulsed at 1 ms, 10% Duty-Cycle Maximum | 5 | |||
| Operating temperature range, Industrial (B version) | -40 | 125 | °C | 5 | |||
| Storage temperature range | -65 | 150 | °C | 5 | |||
| Junction temperature | 150 | °C | 5 | ||||
| SOIC package power dissipation | 400 | mW | SOIC package | 5 | |||
| SOIC package thermal impedance θJA | θJA | 155 | °C/W | SOIC package | 5 | ||
| VDD supply, dual-supply test condition | VDD | 15 | V | Dual-supply spec condition, ±10% tolerance as printed | 3 | ||
| VSS supply, dual-supply test condition | VSS | -15 | V | Dual-supply spec condition, ±10% tolerance as printed | 3 | ||
| VL logic supply, dual-supply test condition | VL | 5 | V | Dual-supply spec condition, ±10% tolerance as printed | 3 | ||
| VDD supply, single-supply test condition | VDD | 12 | V | Single-supply spec condition, ±10% tolerance as printed | 4 | ||
| VSS supply, single-supply test condition | VSS | 0 | V | Single-supply spec condition | 4 | ||
| VL logic supply, single-supply test condition | VL | 5 | V | Single-supply spec condition, ±10% tolerance as printed | 4 | ||
| On resistance, dual supply, B version | RON | 25 | Ω | VD = ±12.5 V, IS = −10 mA | 3 | ||
| On resistance, single supply, B version | RON | 40 | Ω | VD = 3 V, 8.5 V, IS = −10 mA | 4 | ||
| Break-before-make time delay, single supply, B version | tD | 60 | ns | RL = 300 Ω, CL = 35 pF; VS1 = VS2 = 8 V; see Figure 15 | 4 | ||
| Off isolation, dual supply, B version | 80 | dB | RL = 50 Ω, f = 1 MHz; see Figure 16 | 3 | |||
| Channel-to-channel crosstalk, dual supply, B version | 90 | dB | RL = 50 Ω, f = 1 MHz; see Figure 17 | 3 | |||
| Off switch source capacitance, dual supply, B version | CS (Off) | 6 | pF | f = 1 MHz | 3 | ||
| On switch capacitance, dual supply, B version | CD, CS (On) | 55 | pF | f = 1 MHz | 3 |
CAD (KiCad official)
- Symbol:
ADG419BRZ-REEL7 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
adg419brz-reel7-etched.step/adg419brz-reel7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);adg419brz-reel7.step/adg419brz-reel7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Analog Devices datasheet (16 pp, sha256
99f7f2e00c10da77, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ADG419BRZ-REEL7
**Analog Devices** · Analog Switches, Multiplexers · SOIC-8
ADG419BRZ-REEL7 from Analog Devices, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | bidirectional | Drain terminal that may be an input or an output of the analog switch. |
| 2 | S1 | bidirectional | Source terminal that may be an input or an output; S1 conducts to D when Logic is 0. |
| 3 | GND | power_in | Ground (0 V) reference; GND to VDD is limited to −0.3 V to +25 V and VSS to GND to +0.3 V to −25 V in the absolute maximum ratings. |
| 4 | VDD | power_in | Most positive power supply potential; VDD to VSS is rated at 44 V maximum and VDD to GND at −0.3 V to +25 V. |
| 5 | VL | power_in | Logic power supply (5 V), with VL to GND rated at −0.3 V to VDD + 0.3 V. |
| 6 | IN | input | Logic control input that selects the switch state; VINL maximum is 0.8 V and VINH minimum is 2.4 V, with analog/digital inputs rated VSS − 2 V to VDD + 2 V. |
| 7 | VSS | power_in | Most negative power supply potential in dual-supply applications, which may be connected to GND in single-supply applications. |
| 8 | S2 | bidirectional | Source terminal that may be an input or an output; S2 conducts to D when Logic is 1. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Analog Devices |
| Package | SOIC-8 |
| Category | Interface |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| RON, dual supply, B version, +25°C | RON | | | 35 | Ω | VDD = +13.5 V, VSS = −13.5 V | 3 |
| RON, dual supply, B version, −40°C to +125°C | RON | | | 45 | Ω | VDD = +13.5 V, VSS = −13.5 V | 3 |
| Source off leakage, dual supply, B version, +25°C | IS (Off) | -0.25 | | 0.25 | nA | VD = ±15.5 V, VS = −15.5 V; see Figure 12 | 3 |
| Source off leakage, dual supply, B version, −40°C to +125°C | IS (Off) | -15 | | 15 | nA | VD = ±15.5 V, VS = −15.5 V; see Figure 12 | 3 |
| Drain off leakage, dual supply, B version, +25°C | ID (Off) | -0.75 | | 0.75 | nA | VD = ±15.5 V, VS = −15.5 V; see Figure 12 | 3 |
| Drain off leakage, dual supply, B version, −40°C to +125°C | ID (Off) | -30 | | 30 | nA | VD = ±15.5 V, VS = −15.5 V; see Figure 12 | 3 |
| Channel on leakage, dual supply, B version, +25°C | ID, IS (On) | -0.75 | | 0.75 | nA | VS = VD = ±15.5 V; see Figure 13 | 3 |
| Channel on leakage, dual supply, B version, −40°C to +125°C | ID, IS (On) | -30 | | 30 | nA | VS = VD = ±15.5 V; see Figure 13 | 3 |
| Input high voltage (all temperatures) | VINH | 2.4 | | | V | | 3 |
| Input low voltage (all temperatures) | VINL | | | 0.8 | V | | 3 |
| Input current IINL or IINH (all temperatures) | IINL or IINH | -0.5 | | 0.5 | μA | VIN = VINL or VINH | 3 |
| Transition time, dual supply, B version, +25°C | tTRANSITION | | | 160 | ns | RL = 300 Ω, CL = 35 pF; VS1 = ±10 V, VS2 = ∓10 V; see Figure 14 | 3 |
| Transition time, dual supply, B version, −40°C to +125°C | tTRANSITION | | | 200 | ns | RL = 300 Ω, CL = 35 pF; VS1 = ±10 V, VS2 = ∓10 V; see Figure 14 | 3 |
| Break-before-make time delay, dual supply, 25°C | tD | 5 | | | ns | RL = 300 Ω, CL = 35 pF; VS1 = VS2 = ±10 V; see Figure 15 | 3 |
| Supply current IDD, dual supply, B version, +25°C | IDD | | | 1 | μA | VIN = 0 V or 5 V | 3 |
| Supply current IDD, dual supply, B version, −40°C to +125°C | IDD | | | 2.5 | μA | VIN = 0 V or 5 V | 3 |
| Negative supply current ISS, dual supply, B version, +25°C | ISS | | | 1 | μA | | 3 |
| Negative supply current ISS, dual supply, B version, −40°C to +125°C | ISS | | | 2.5 | μA | | 3 |
| Logic supply current IL, dual supply, B version, +25°C | IL | | | 1 | μA | VL = 5.5 V | 3 |
| Logic supply current IL, dual supply, B version, −40°C to +125°C | IL | | | 2.5 | μA | VL = 5.5 V | 3 |
| On resistance, single supply, B version, +25°C | RON | | | 60 | Ω | VDD = 10.8 V | 4 |
| On resistance, single supply, B version, −40°C to +125°C | RON | | | 70 | Ω | VDD = 10.8 V | 4 |
| Source off leakage, single supply, B version, +25°C | IS (Off) | -0.25 | | 0.25 | nA | VD = 12.2 V/1 V, VS = 1 V/12.2 V; see Figure 12 | 4 |
| Source off leakage, single supply, B version, −40°C to +125°C | IS (Off) | -15 | | 15 | nA | VD = 12.2 V/1 V, VS = 1 V/12.2 V; see Figure 12 | 4 |
| Drain off leakage, single supply, B version, +25°C | ID (Off) | -0.75 | | 0.75 | nA | VD = 12.2 V/1 V, VS = 1 V/12.2 V; see Figure 12 | 4 |
| Drain off leakage, single supply, B version, −40°C to +125°C | ID (Off) | -30 | | 30 | nA | VD = 12.2 V/1 V, VS = 1 V/12.2 V; see Figure 12 | 4 |
| Channel on leakage, single supply, B version, +25°C | ID, IS (On) | -0.75 | | 0.75 | nA | VS = VD = 12.2 V/1 V; see Figure 13 | 4 |
| Channel on leakage, single supply, B version, −40°C to +125°C | ID, IS (On) | -30 | | 30 | nA | VS = VD = 12.2 V/1 V; see Figure 13 | 4 |
| Transition time, single supply, B version, +25°C | tTRANSITION | | | 180 | ns | RL = 300 Ω, CL = 35 pF; VS1 = 0 V/8 V, VS2 = 8 V/0 V; see Figure 14 | 4 |
| Transition time, single supply, B version, −40°C to +125°C | tTRANSITION | | | 250 | ns | RL = 300 Ω, CL = 35 pF; VS1 = 0 V/8 V, VS2 = 8 V/0 V; see Figure 14 | 4 |
| Supply current IDD, single supply, B version, +25°C | IDD | | | 1 | μA | VIN = 0 V or 5 V | 4 |
| Supply current IDD, single supply, B version, −40°C to +125°C | IDD | | | 2.5 | μA | VIN = 0 V or 5 V | 4 |
| Logic supply current IL, single supply, B version, +25°C | IL | | | 1 | μA | VL = 5.5 V | 4 |
| Logic supply current IL, single supply, B version, −40°C to +125°C | IL | | | 2.5 | μA | VL = 5.5 V | 4 |
| Maximum voltage VDD to VSS | | | | 44 | V | | 5 |
| VDD to GND | | -0.3 | | 25 | V | | 5 |
| VSS to GND | | -25 | | 0.3 | V | | 5 |
| Continuous current, S or D | | | | 30 | mA | | 5 |
| Peak current, S or D | | | | 100 | mA | Pulsed at 1 ms, 10% Duty-Cycle Maximum | 5 |
| Operating temperature range, Industrial (B version) | | -40 | | 125 | °C | | 5 |
| Storage temperature range | | -65 | | 150 | °C | | 5 |
| Junction temperature | | | | 150 | °C | | 5 |
| SOIC package power dissipation | | | | 400 | mW | SOIC package | 5 |
| SOIC package thermal impedance θJA | θJA | | 155 | | °C/W | SOIC package | 5 |
| VDD supply, dual-supply test condition | VDD | | 15 | | V | Dual-supply spec condition, ±10% tolerance as printed | 3 |
| VSS supply, dual-supply test condition | VSS | | -15 | | V | Dual-supply spec condition, ±10% tolerance as printed | 3 |
| VL logic supply, dual-supply test condition | VL | | 5 | | V | Dual-supply spec condition, ±10% tolerance as printed | 3 |
| VDD supply, single-supply test condition | VDD | | 12 | | V | Single-supply spec condition, ±10% tolerance as printed | 4 |
| VSS supply, single-supply test condition | VSS | | 0 | | V | Single-supply spec condition | 4 |
| VL logic supply, single-supply test condition | VL | | 5 | | V | Single-supply spec condition, ±10% tolerance as printed | 4 |
| On resistance, dual supply, B version | RON | | 25 | | Ω | VD = ±12.5 V, IS = −10 mA | 3 |
| On resistance, single supply, B version | RON | | 40 | | Ω | VD = 3 V, 8.5 V, IS = −10 mA | 4 |
| Break-before-make time delay, single supply, B version | tD | | 60 | | ns | RL = 300 Ω, CL = 35 pF; VS1 = VS2 = 8 V; see Figure 15 | 4 |
| Off isolation, dual supply, B version | | | 80 | | dB | RL = 50 Ω, f = 1 MHz; see Figure 16 | 3 |
| Channel-to-channel crosstalk, dual supply, B version | | | 90 | | dB | RL = 50 Ω, f = 1 MHz; see Figure 17 | 3 |
| Off switch source capacitance, dual supply, B version | CS (Off) | | 6 | | pF | f = 1 MHz | 3 |
| On switch capacitance, dual supply, B version | CD, CS (On) | | 55 | | pF | f = 1 MHz | 3 |
## CAD (KiCad official)
- Symbol: `ADG419BRZ-REEL7`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `adg419brz-reel7-etched.step` / `adg419brz-reel7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `adg419brz-reel7.step` / `adg419brz-reel7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Analog Devices datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588893150437498880) (16 pp, sha256 `99f7f2e00c10da77`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/adg419brz-reel7-datasheet.pdf)