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ADA4571WHRZ-R7

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Analog Devices Position Sensor, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ADA4571WHRZ-R7

Analog Devices · Position Sensor · SOIC-8

ADA4571WHRZ-R7 from Analog Devices, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GC input Gain control mode enable, tied to GND or VDD to select the two gain conditions specified in the electrical characteristics.
2 VCOS output Analog cosine output, which stays within 7% to 93% of VDD in normal operation and goes to 5% VDD when a broken bond wire is detected.
3 GND power_in Ground pin; the device has two GND pins (3 and 6) that both serve as the ground reference.
4 VSIN output Analog sine output, ratiometric to VDD with a normal output voltage range of 7% to 93% of VDD.
5 VTEMP output Temperature output, which the datasheet rates as withstanding a short circuit to GND or VDD indefinitely.
6 GND power_in Ground pin; the device has two GND pins (3 and 6) that both serve as the ground reference.
7 VDD power_in Supply pin, specified from 2.7 V to 5.5 V, with an absolute maximum rating of -0.3 V to +6 V.
8 PD input Active-high power-down pin; output series resistance is 60 Ω with PD = GND and 63 kΩ with PD = VDD.

Key specifications

Parameter Value
Manufacturer Analog Devices
Package SOIC-8
Category Sensors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Angle Measurement Range 0 180 Degrees 3
Uncorrected Angular Error αUNCORR -5 5 Degrees TA = −40°C 3
Single Point Calibration Angular Error αCAL -0.7 0.7 Degrees TA = −40°C to +150°C, GC = GND 3
Dynamic Angular Error αDYNAMIC 0.1 0.5 Degrees TA = −40°C to +150°C, rotation frequency = 2000 rpm 3
Amplitude VAMP 63 75 % VDD GC = GND, TA = −40°C 3
Amplitude VAMP 41 53 % VDD GC = GND, TA = 25°C 3
Amplitude VAMP 21 33 % VDD GC = GND, TA = 125°C 3
Amplitude VAMP 18 30 % VDD GC = GND, TA = 150°C 3
Amplitude VAMP 56 77 % VDD GC = VDD, TA = −40°C 3
Amplitude VAMP 52 72 % VDD GC = VDD, TA = 25°C 3
Amplitude VAMP 38 57 % VDD GC = VDD, TA = 125°C 3
Amplitude VAMP 35 55 % VDD GC = VDD, TA = 150°C 3
Output Voltage Range VO_SWING 7 93 % VDD VSIN and VCOS, normal operation 3
Output Voltage Low VOL 5 % VDD VSIN or VCOS, broken bond wire detected 3
Output Referred Offset Voltage VOFFSET 3.75 % VDD GC = VDD 3
Amplitude Synchronism Error k -1 1 % peak 3
Delay Time tDEL 2 µs Rotation frequency = 30,000 rpm 3
Phase Error ΦERR 0.8 Degrees Rotation frequency = 30,000 rpm 3
Orthogonality Error OE 0.05 Degrees 3
Output Noise VNOISE 500 µV rms Bandwidth = 80 kHz, referred to output (RTO) 3
Output Series Resistance RO 60 Ω Normal operation, PD = GND 3
Output Series Resistance RO 63 kΩ PD = VDD 3
Output −3 dB Cutoff Frequency f−3dB 100 kHz Amplifier BW, CL = 10 pF 3
Power Supply Rejection PSRR 80 dB Output variation from VDD/2, VDD = 2.7 V to 5.5 V, RL = 200 kΩ to GND, GC = GND or VDD 4
Output Short-Circuit Current ISC 15 20 mA Short to GND per pin (VSIN, VCOS) 4
Output Short-Circuit Current ISC -15 -18 mA Short to VDD per pin (VSIN, VCOS) 4
Sensitivity SEN 52 mV/° α1 = 0°, α2 = 135°, TA = 25°C 4
Supply Voltage VDD 2.7 5.5 V 4
Quiescent Supply Current ISY 3.5 4.5 6.5 mA PD = GND, GC = GND, no load 4
Quiescent Supply Current ISY 7 mA PD = GND, GC = VDD, no load 4
Quiescent Supply Current ISY 15 µA PD = VDD, no load 4
Power-Up Time tPWRUP 150 µs To 98% of desired output level after VDD was reached 4
Power-Up Time tPWRUP 100 µs To 98% of desired output level after PD cycling 4
Input Bias Current (GC) IB_GC 30 µA GC mode control pin, GC = GND 4
Input Bias Current (GC) IB_GC 3 µA GC mode control pin, GC = VDD 4
Input Bias Current (PD) IB_PD 3 µA PD pin, PD = GND 4
Input Bias Current (PD) IB_PD 30 µA PD pin, PD = VDD 4
Input Voltage High VIH 1.4 V GC and PD 4
Input Voltage Low VIL 0.35 V GC and PD 4
Error Over Temperature TERR 5 °C 4
Temperature Voltage Range TRANGE 0 82 % VDD TA = −40°C to +150°C 4
Temperature Coefficient TCO 3.173 mV/V/°C 4
VTEMP Output Voltage VTEMP 18 40 % VDD TA = 25°C 4
VTEMP Output Impedance 50 Ω Buffered output 4
VTEMP Load Capacitance 0 22 nF Optional load capacitance 4
VTEMP Short-Circuit Current ISC_VTEMP 2 mA Short-circuit to VDD or GND 4
External Load Capacitance CL 10 nF Between VSIN to GND and VCOS to GND; solder close to package 4
Operating Temperature -40 150 °C 7
Storage Temperature -65 150 °C 7
Supply Voltage (VDD) VDD -0.3 6 V GC or PD at VDD + 0.3 V 7
ESD Human Body Model 4000 V JESD22-C101 7
ESD Machine Model 300 V JESD22-A115 7
ESD Charge Device Model 1250 V ESDA/JEDEC JS-001-2011 7
Thermal Resistance, junction to ambient, 8-Lead SOIC θJA 120 °C/W Device soldered in circuit board, surface-mount package 7

CAD (KiCad official)

  • Symbol: ADA4571WHRZ-R7
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ada4571whrz-r7-etched.step / ada4571whrz-r7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ada4571whrz-r7.step / ada4571whrz-r7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Analog Devices datasheet (21 pp, sha256 aae243ffd2df2d7b, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF