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ADA4523-1BRZ-RL7

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Analog Devices Precision Op Amps, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ADA4523-1BRZ-RL7

Analog Devices · Precision Op Amps · SOIC-8

ADA4523-1BRZ-RL7 from Analog Devices, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 SD input Shutdown control pin, referenced to SDCOM (pin 8), which places the amplifier in shutdown mode.
2 −IN input Inverting input of the amplifier.
3 +IN input Noninverting input of the amplifier.
4 V− power_in Negative power supply.
5 NIC unconnected Not internally connected; this pin is not connected internally.
6 OUT output Amplifier output, with rail-to-rail output swing.
7 V+ power_in Positive power supply.
8 SDCOM passive Reference voltage for SD (pin 1).

Key specifications

Parameter Value
Manufacturer Analog Devices
Package SOIC-8
Category Amplifiers/Comparators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Offset Voltage VOS -5 0.5 5 µV 5
Offset Voltage over temperature VOS -7 7 µV −40°C ≤ TA ≤ +125°C 5
Offset Voltage Drift TCVOS -0.02 0.02 µV/°C −40°C ≤ TA ≤ +125°C 5
Input Bias Current IB 125 300 pA 5
Input Bias Current over temperature IB 600 pA −40°C ≤ TA ≤ +125°C 5
Input Offset Current IOS 250 600 pA 5
Input Offset Current over temperature IOS 800 pA −40°C ≤ TA ≤ +125°C 5
Input Voltage Range IVR -15.1 13.5 V −40°C ≤ TA ≤ +125°C 5
Common-Mode Rejection Ratio CMRR 140 160 dB VCM = −15.1 V to +13.5 V 5
Common-Mode Rejection Ratio over temperature CMRR 140 dB VCM = −15 V to +13.5 V, −40°C ≤ TA ≤ +125°C 5
Open-Loop Voltage Gain AV 140 160 dB VOUT = −14.75 V to +14.75 V, RL = 10 kΩ 5
Open-Loop Voltage Gain over temperature AV 140 dB −40°C ≤ TA ≤ +125°C 5
Output Low Voltage Swing (no load) VOL 12 20 mV No load 5
Output Low Voltage Swing (no load) over temperature VOL 30 mV No load, −40°C ≤ TA ≤ +125°C 5
Output Low Voltage Swing (1 mA sink) VOL 50 75 mV ISINK = 1 mA 5
Output Low Voltage Swing (1 mA sink) over temperature VOL 100 mV ISINK = 1 mA, −40°C ≤ TA ≤ +125°C 5
Output Low Voltage Swing (5 mA sink) VOL 215 300 mV ISINK = 5 mA 5
Output Low Voltage Swing (5 mA sink) over temperature VOL 400 mV ISINK = 5 mA, −40°C ≤ TA ≤ +125°C 5
Output High Voltage Swing (no load) VOH 2.5 10 mV No load 5
Output High Voltage Swing (no load) over temperature VOH 20 mV No load, −40°C ≤ TA ≤ +125°C 5
Output High Voltage Swing (1 mA source) VOH 25 40 mV ISOURCE = 1 mA 5
Output High Voltage Swing (1 mA source) over temperature VOH 55 mV ISOURCE = 1 mA, −40°C ≤ TA ≤ +125°C 5
Output High Voltage Swing (5 mA source) VOH 110 150 mV ISOURCE = 5 mA 5
Output High Voltage Swing (5 mA source) over temperature VOH 200 mV ISOURCE = 5 mA, −40°C ≤ TA ≤ +125°C 5
Short-Circuit Current, sourcing ISC 25 36 mA 5
Short-Circuit Current, sinking ISC -25 -30 mA 5
Power Supply Rejection Ratio PSRR 140 168 dB VS = 4.5 V to 36 V 5
Power Supply Rejection Ratio over temperature PSRR 140 dB −40°C ≤ TA ≤ +125°C 5
Supply Current per Amplifier IS 4.5 5 mA 5
Supply Current per Amplifier over temperature IS 6 mA −40°C ≤ TA ≤ +125°C 5
Shutdown Amplifier Current 10 15 µA 5
Shutdown Amplifier Current over temperature 20 µA −40°C ≤ TA ≤ +125°C 5
SDCOM Voltage Range -15 12.65 V 6
Shutdown Threshold Low VSDL 0.8 V 6
Shutdown Threshold High VSDH 2 V 6
SD Current ISD -1.5 -0.5 µA VSD − VSDCOM = 0 V 6
SDCOM Current ISDCOM 3 6 µA VSD − VSDCOM = 0 V 6
Supply Voltage, V+ to V− 40 V 7
Input Current, +IN and −IN -10 10 mA 7
Input Current, SD and SDCOM -10 10 mA 7
Operating Temperature Range TA -40 125 °C 7
Junction Temperature Range TJ -65 150 °C 7
Storage Temperature Range -65 150 °C 7
Lead Temperature, Soldering 300 °C 10 sec 7
Electrostatic Discharge, Human Body Model (HBM) 4 kV 7
Electrostatic Discharge, Field Induced Charge Device Model (FICDM) 2 kV 7
Supply Voltage Range 4.5 36 V 1
Thermal Resistance, junction to ambient (R-8 SOIC) θJA 120 °C/W Measured with JEDEC 4-layer high effective thermal conductivity board 7
Thermal Resistance, junction to case (R-8 SOIC) θJC 39 °C/W Measured with JEDEC 4-layer high effective thermal conductivity board 7

CAD (KiCad official)

  • Symbol: ADA4523-1BRZ-RL7
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ada4523-1brz-rl7-etched.step / ada4523-1brz-rl7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ada4523-1brz-rl7.step / ada4523-1brz-rl7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Analog Devices datasheet (29 pp, sha256 5d6ce46e17233ee7, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF