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AD8676BRZ-REEL7

Public Made by Adom

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Analog Devices Operational Amplifier, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AD8676BRZ-REEL7

Analog Devices · Operational Amplifier · SOIC-8

AD8676BRZ-REEL7 from Analog Devices, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUT A output Output of amplifier A, which swings rail-to-rail per the Output Characteristics specifications (VOH/VOL).
2 -IN A input Inverting input of amplifier A; the input voltage range is −3.0 V to +3.0 V at ±5 V supplies and −12.5 V to +12.5 V at ±15 V supplies.
3 +IN A input Non-inverting input of amplifier A, with the same input voltage range as the inverting input.
4 V- power_in Negative supply rail; the part is rated for a supply of ±18 V maximum, and the supplies must be established at the same time as or before any input signal is applied.
5 +IN B input Non-inverting input of amplifier B, with the same input voltage range as amplifier A.
6 -IN B input Inverting input of amplifier B, with the same input voltage range as amplifier A.
7 OUT B output Output of amplifier B, which swings rail-to-rail per the Output Characteristics specifications (VOH/VOL).
8 V+ power_in Positive supply rail; the part is rated for a supply of ±18 V maximum, and the supplies must be established at the same time as or before any input signal is applied.

Key specifications

Parameter Value
Manufacturer Analog Devices
Package SOIC-8
Category Amplifiers/Comparators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input Offset Voltage (B grade, SOIC) VOS 12 50 μV VS=±5.0 V, TA=+25°C; B grade SOIC 3
Input Offset Voltage over temperature (B grade, SOIC/MSOP) VOS 15 160 μV VS=±5.0 V, −40°C ≤ TA ≤ +125°C 3
Input Bias Current IB -2 2 nA VS=±5.0 V, TA=+25°C 3
Input Bias Current over temperature IB -5.5 5.5 nA VS=±5.0 V, −40°C ≤ TA ≤ +125°C 3
Input Offset Current IOS -1 1 nA VS=±5.0 V, TA=+25°C 3
Input Offset Current over temperature IOS -2.8 2.8 nA VS=±5.0 V, −40°C ≤ TA ≤ +125°C 3
Input Voltage Range -3 3 V VS=±5.0 V 3
Common-Mode Rejection Ratio CMRR 105 130 dB VCM = −3.0 V to +3.0 V, VS=±5.0 V 3
Common-Mode Rejection Ratio over temperature CMRR 105 dB −40°C ≤ TA ≤ +125°C, VS=±5.0 V 3
Open-Loop Gain AVO 120 126 dB RL = 2 kΩ to ground, VO = −3.5 V to +3.5 V, VS=±5.0 V 3
Open-Loop Gain over temperature AVO 117 dB −40°C ≤ TA ≤ +125°C, RL = 2 kΩ to ground, VS=±5.0 V 3
Offset Voltage Drift ΔVOS/ΔT 0.2 0.6 μV/°C −40°C ≤ TA ≤ +125°C, VS=±5.0 V 3
Output Voltage High (RL = 10 kΩ) VOH 4.9 4.95 V RL = 10 kΩ to ground, VS=±5.0 V 3
Output Voltage High over temperature (RL = 10 kΩ) VOH 4.85 V −40°C ≤ TA ≤ +125°C, RL = 10 kΩ to ground, VS=±5.0 V 3
Output Voltage High (RL = 2 kΩ) VOH 4.8 4.89 V RL = 2 kΩ to ground, VS=±5.0 V 3
Output Voltage High over temperature (RL = 2 kΩ) VOH 4.75 V −40°C ≤ TA ≤ +125°C, RL = 2 kΩ to ground, VS=±5.0 V 3
Output Voltage Low (RL = 10 kΩ) VOL -4.98 -4.9 V RL = 10 kΩ to ground, VS=±5.0 V 3
Output Voltage Low over temperature (RL = 10 kΩ) VOL -4.85 V −40°C ≤ TA ≤ +125°C, RL = 10 kΩ to ground, VS=±5.0 V 3
Output Voltage Low (RL = 2 kΩ) VOL -4.91 -4.86 V RL = 2 kΩ to ground, VS=±5.0 V 3
Output Voltage Low over temperature (RL = 2 kΩ) VOL -4.82 V −40°C ≤ TA ≤ +125°C, RL = 2 kΩ to ground, VS=±5.0 V 3
Short-Circuit Limit ISC 40 mA 3
Output Current IO -20 20 mA 3
Power Supply Rejection Ratio PSRR 106 120 dB VS = ±5.0 V to ±15.0 V, TA=+25°C 3
Power Supply Rejection Ratio over temperature PSRR 106 120 dB −40°C ≤ TA ≤ +125°C, VS = ±5.0 V to ±15.0 V 3
Supply Current per Amplifier ISY 2.5 3.2 mA VO = 0 V, VS=±5.0 V, TA=+25°C 3
Supply Current per Amplifier over temperature ISY 3.8 mA −40°C ≤ TA ≤ +125°C, VO = 0 V, VS=±5.0 V 3
Input Offset Voltage (B grade, SOIC) VOS 12 50 μV VS=±15 V, TA=+25°C; B grade SOIC 4
Input Offset Voltage over temperature (B grade, SOIC/MSOP) VOS 15 160 μV VS=±15 V, −40°C ≤ TA ≤ +125°C 4
Input Bias Current IB -2 2 nA VS=±15 V, TA=+25°C 4
Input Bias Current over temperature IB -4.5 4.5 nA VS=±15 V, −40°C ≤ TA ≤ +125°C 4
Input Offset Current IOS -1 1 nA VS=±15 V, TA=+25°C 4
Input Offset Current over temperature IOS -2.8 2.8 nA VS=±15 V, −40°C ≤ TA ≤ +125°C 4
Input Voltage Range -12.5 12.5 V VS=±15 V 4
Common-Mode Rejection Ratio CMRR 111 130 dB VCM = −12.5 V to +12.5 V, VS=±15 V 4
Common-Mode Rejection Ratio over temperature CMRR 107 130 dB −40°C ≤ TA ≤ +125°C, VS=±15 V 4
Open-Loop Gain AVO 123 132 dB RL = 2 kΩ to ground, VO = −13.5 V to +13.5 V, VS=±15 V 4
Open-Loop Gain over temperature AVO 117 dB −40°C ≤ TA ≤ +125°C, RL = 2 kΩ to ground, VS=±15 V 4
Offset Voltage Drift ΔVOS/ΔT 0.2 0.6 μV/°C −40°C ≤ TA ≤ +125°C, VS=±15 V 4
Output Voltage High (RL = 10 kΩ) VOH 14.85 14.92 V RL = 10 kΩ to ground, VS=±15 V 4
Output Voltage High over temperature (RL = 10 kΩ) VOH 14.8 V −40°C ≤ TA ≤ +125°C, RL = 10 kΩ to ground, VS=±15 V 4
Output Voltage High (RL = 2 kΩ) VOH 14.6 14.75 V RL = 2 kΩ to ground, VS=±15 V 4
Output Voltage High over temperature (RL = 2 kΩ) VOH 14.4 V −40°C ≤ TA ≤ +125°C, RL = 2 kΩ to ground, VS=±15 V 4
Output Voltage Low (RL = 10 kΩ) VOL -14.96 -14.94 V RL = 10 kΩ to ground, VS=±15 V 4
Output Voltage Low over temperature (RL = 10 kΩ) VOL -14.9 V −40°C ≤ TA ≤ +125°C, RL = 10 kΩ to ground, VS=±15 V 4
Output Voltage Low (RL = 2 kΩ) VOL -14.85 -14.75 V RL = 2 kΩ to ground, VS=±15 V 4
Output Voltage Low over temperature (RL = 2 kΩ) VOL -14.6 V −40°C ≤ TA ≤ +125°C, RL = 2 kΩ to ground, VS=±15 V 4
Power Supply Rejection Ratio PSRR 106 120 dB VS = ±5.0 V to ±15.0 V, TA=+25°C 4
Power Supply Rejection Ratio over temperature PSRR 106 dB −40°C ≤ TA ≤ +125°C, VS = ±5.0 V to ±15.0 V 4
Supply Current per Amplifier ISY 2.7 3.4 mA VO = 0 V, VS=±15 V, TA=+25°C 4
Supply Current per Amplifier over temperature ISY 4.2 mA −40°C ≤ TA ≤ +125°C, VO = 0 V, VS=±15 V 4
Supply Voltage -18 18 V 5
Differential Input Voltage -0.7 0.7 V 5
Operating Temperature Range -40 125 °C 5
Storage Temperature Range (R package) -65 150 °C RM, R packages 5
Junction Temperature Range (R package) -65 150 °C RM, R packages 5
Lead Temperature Range (soldering) 300 °C Soldering, 10 s 5
Thermal Resistance Junction-to-Ambient (SOIC_N, R-8) θJA 158 °C/W 8-Lead SOIC_N (R) 5
Thermal Resistance Junction-to-Case (SOIC_N, R-8) θJC 43 °C/W 8-Lead SOIC_N (R) 5

CAD (KiCad official)

  • Symbol: AD8676BRZ-REEL7
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ad8676brz-reel7-etched.step / ad8676brz-reel7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ad8676brz-reel7.step / ad8676brz-reel7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Analog Devices datasheet (12 pp, sha256 f088c5d001bb7871, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF